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Pubblicazioni antecedenti il 2004
1) G. Ciatto, F.D'Acapito,
B.Fraboni, F.Boscherini, N.El Habra, T.Cesca, A.Gasparotto,
E.Moreira, F.Priolo “Local structure of iron implanted in Indium
Posphide” Nucl.Instrum.Methods B 200, 100 (2003)
2) A.Cavallini, B.Fraboni,
W.Dusi e M.Zanarini “Defective states induced in CdZnTe and CdTe
detectors by high and low energy neutrons” J.Appl.Phys. 94
3135 (2003)
3) A .Gasparotto, T.Cesca,
B.Fraboni, F.Priolo “Correlation among structural, electrical and
deep level properties of Fe centers implanted in InP” Physica B
340-342, 403 (2003)
4) T.Cesca V. Rampazzo, G.
Mattei, A. Gasparotto, B. Fraboni, F. Boscherini, F .Priolo,
G.Ciatto, C.Bocchi “Atomic Environment of Fe in high temperature
implanted InP” Phys.Rev. B 68 224113 (2003)
5) A.Cavallini, B.Fraboni,
W.Dusi, N.Auricchio, M.Zanarini, P.Siffert “Behaviour of CdTe and
CdZnTe detectors following electron irradiation” IEEE Trans.
Nucl.Science 49, 1598 (2002)
6) A.Cavallini, B.Fraboni,
W.Dusi, N.Auricchio, P.Chirco, M.Zanarini, P.Siffert, P.Fougeres
“Radiation effects on II-VI compound based detectors” Nucl.Instru
m.Methods A 476 770 (2002)
7) A.Cavallini, B.Fraboni,
W.Dusi, N.Auricchio, M.Zanarini, P.Chirco “The time recovery of
spectroscopic properties of CdZnTe and CdTe heavily irradiated
detectors” Appl.Phys.A 75, 427 (2002)
8) A.Gasparotto, T.Cesca,
N.El Habra, B.Fraboni, F.Boscherini, F.Priolo, E.C.Moreira,
G.Ciatto, F.D'Acapito, G.Scamarcio “Implant and characterization of
highly concentrated Fe deep centers in InP” Mat.Sci.Eng.B 91-92C
503 (2002)
9) A.Gasparotto, B.Fraboni,
F.Priolo, F.Enrichi, A.Mazzone, G.Scamarcio, M.Troccoli, R.Mosca
“Assessment of electrical and optical properties of heavily
Fe-implanted InP” Mat.Sci.Eng.B 80 202 (2001)
10) B.Fraboni, A.Gasparotto, T.Cesca, F.Priolo,
G.Scamarcio, A.Mazzone, M.Troccoli “High Fe solubility in InP by
high temperature ion implantation” Nucl.Instr.Meth.B 178 275
(2001)
11) A.Mazzo ne, M.Troccoli, G.Scamarcio, B.Fraboni,
F.Priolo, A.Gasparotto “Mid-ir (3.5µm) electroluminescence from
heavily Fe2+ ion implanted semi-insulating InP” Optical Materials
17 189 (2001)
12) M.Troccoli, G.Scamarcio, B.Fraboni, F.Priolo,
A.Gasparotto “Deep level electroluminescence at 3.5µm from
semi-insulating InP layers ion implanted with Fe”
Semicon.Sci.Technol. 16 L1 (2001)
13) A.Cavallini, B.Fraboni, N.Auricchio,
E.Caroli, W.Dusi, P.Chirco, M.P.Morigi, M.Zanarini, M.Hage-Ali,
P.Siffert “Irradiation induced defects in CdTe and CdZnTe
detectors” Nucl.Instr.Meth. A 458 392 (2001)
14) A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini,
M.Hage-Ali, P.Siffert “Defects introduced in cadmium telluride by
gamma-irradiation” J.Appl.Phys. 89 55 (2001)
15) B.Fraboni, A.Gasparotto, F.Priolo, G.Scamarcio
“High Fe2+/3+ trap concentration in heavily compensated implanted
InP” Appl.Phys.A 73 35 (2001)
16) A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini
“On the role of extended defects on the transport properties of
Er-doped silicon” Phil.Mag.B 80 571 (2000)
17) A.Cavallini, B.Fraboni, P.Chirco, M.P.Morigi,
M.Zanarini, W.Dusi, N.Auricchio, E.Caroli. P.Fougeres, M.Hage-Ali,
P.Siffert “Electronic properties of traps induced by
gamma-irradiation in CdTe and CdZnTe detectors” Nucl.Instr.Meth. A
448 558 (2000)
18) A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini
“Charge collection mapping of the back-transfer process in Er-doped
silicon” Appl.Phys.Lett. 76 3585 (2000)
19) A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini,
P.Siffert “Deep levels and compensation in gamma-irradiated
CdZnTe” Appl.Phys.Lett. 77, 3212 (2000)
20) P.Chirco, E.Caroli, A.Cavallini, W.Dusi,
B.Fraboni, M.Hage-Ali, M.P.Morigi, P.Siffert, M.Zanarini “CdTe
detectors' response to irradiation with high-energy gamma-rays”
IEEE Trans.Nucl.Sci. 47 2078 (2000)
21) A.Cavallini, B.Fraboni, S.Pizzini, S.Binetti,
S.Sanguinetti, L.Lazzarini, G.Salviati “Electrical and optical
characterization of Er-doped silicon grown by liquid phase epitaxy”
J.Appl.Phys. 85 1582 (1999)
22) A.Gasparotto, A.Carnera, C. Frigeri, F.Priolo,
B.Fraboni, A.Camporese, G.Rossetto “Interaction between Fe, dopants
and secondary defects in MeV Fe ion implanted InP”
J.Appl.Phys. 85 753 (1999)
23) A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini,
L.Lazzarini, G.Salviati "Electrical and optical analyses of
Er-doped silicon grown by Liquid Phase Epitaxy", Journal of
Luminescence 80 347 (1999)
24) S.Binetti, A.Cavallini, A.Dellafiore, B.Fraboni,
E.Grilli, M.Guzzi, S.Pizzini, S.Sanguinetti "Erbium doped epilayers
grown by LPE", Journal of Luminescence 80 343 (1999)
25) A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini,
L.Lazzarini, G.Salviati "On the influence of dislocations on the
luminescence of Si:Er" phys.stat.sol.(a) 171 347 (1999)
26) C.Frigeri, A.Carnera,A.Gasparotto, B.Fraboni,
F.Priolo, A.Camporese, G.Rossetto “Gettering of Fe at the end of
range loops and twin band interfaces in Fe-implanted InP”
phys.stat.sol.(a) 171 209 (1999)
27) A.Gasparotto, A.Carnera, A.Paccagnella,
B.Fraboni, F.Priolo, E.Gombia, R.Mosca, G.Rossetto “Semi-insulating
behaviour of Fe MeV implanted n-type InP” in
Nucl.Instr.Meth.B 148 411 (1999)
28) S.Binetti, S.Pizzini, A.Cavallini, B.Fraboni
“Erbium doped silicon epilayers grown by liquid phase epitaxy”
Semiconductors 33 596 (1999)
29) A.Gasparotto, A.Carnera, A.Paccagnella,
B.Fraboni, F.Priolo, E.Gombia, R.Mosca “High resistance
buried layers by MeV Fe implantation in n-type InP” Appl.Phys.Lett.
75 668 (1999)
30) A.Castaldini, A.Cavallini, B.Fraboni,
P.Fernandez, J.Piqueras, "Deep energy levels in CdTe and CdZnTe"
J.Appl.Phys. 83 2121 (1998)
31) A.Cavallini, B.Fraboni and S.Pizzini, "Deep
levels in Er doped silicon", Appl.Phys.Lett. 72 468
(1998)
32) C.Frigeri, A.Carnera, B.Fraboni,
A.Gasparotto,A.Cassa, F.Priolo, A.Camporese, G.Rossetto "Defect
characterization in InP substrates implanted with 2MeV Fe ions",
Mat.Sci.Eng.B44 193 (1997)
33) S.Pizzini, M.Donghi, S.Binetti, I.Gelmi,
A.Cavallini, B.Fraboni and G.Wagner: "Influence of the host
composition on the equilibrium structure of Er-centres in silicon",
Solid St.Phenom. 54 86 (1997)
34) S.Binetti, M.Donghi, S.Pizzini, A.Castaldini,
A.Cavallini, B.Fraboni, N.Sobolev "Erbium in Silicon:problems and
challenges", Solid St.Phenom. 57-58 197 (1997)
35) A.Castaldini, A.Cavallini, B.Fraboni,
P.Fernandez, J.Piqueras and L.Polenta "Cathodoluminescence and
photo-induced current spectroscopy studies of defects in
Cd0.8Zn0.2Te", Phys.Rev.B 54 1122 (1996)
36) A.Castaldini, A.Cavallini, B.Fraboni,
J.Piqueras and L.Polenta "Comparison of electrical and luminescence
data for A-center in CdTe" Appl.Phys.Lett. 69 3510
(1996)
37) A.Castaldini, A.Cavallini, B.Fraboni,
P.Fernandez, J.Piqueras and L.Polenta "Compensation and deep levels
in II-VI compounds" Mat.Sci.Eng.B42 302 (1996)
38) A.Castaldini, A.Cavallini, B.Fraboni,
P.Fernandez, J.Piqueras, "Midgap traps related to compensation
processes in CdTe alloys" Phys.Rev.B 56 14897 (1997)
39) A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez
and J.Piqueras: "Shallow donor and deep level density: influence on
the diffusion length in GaAs:Te wafers", Il Vuoto, Scienza e
Tecnologia, 3 176 (1995)
40) A.Castaldini, A.Cavallini, B.Fraboni and
J.Piqueras "The EL2 trap in highly doped GaAs:Te", J.Appl.Phys.
78 1089 (1995)
41) B.Mendez, J.Piqueras, A.Cavallini and B.Fraboni:
"Study of defects in implanted GaAs:Te by
cathodoluminescence" Mat. Sci. Eng. B24 138
(1994)
42) A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez,
and J.Piqueras: "Spatial distribution of recombination centres in
GaAs:Te. Effects of the doping level" J.Appl.Phys. 76 987
(1994)
43) D.Cavalcoli, A.Cavallini and B.Fraboni: "The
injection dose effect on the evaluation of bulk and surface
parameters in semiconductors" Phil.Mag. B 70 1095 (1994)
44) A.Castaldini, A.Cavallini, B.Fraboni and J.
Piqueras: "Junction spectroscopy of highly doped GaAs : detection
of the EL2 trap" Mat. Sci. Eng. B25 960 (1994)
45) A.Castaldini, A.Cavallini, B.Fraboni and
E.Giannotte: "Effects of diffusion-induced defects on carrier
lifetime", Appl.Surf.Sci. 63, p.301 (1993)
46) S.Blythe, B.Fraboni, S.Lall, H.Ahmed and U. De
Riu: "Layout reconstruction of complex silicon chips",
IEEE Solid State Circuits 28, p.138 (1993)
47) A.Cavallini, B.Fraboni and D.Cavalcoli:
"Evaluation of diffusion length and surface recombination velocity
in semiconductor devices by the method of moments", J.Appl.Phys.
71, p.5964, (1992).
48) A.Castaldini, A.Cavallini, B.Fraboni and
E.Giannotte: "Role of impurities on diffusion-induced defective
states", J. Appl. Phys. 72, p.1622 (1992)
PROCEEDINGS
1)
P. Cosseddu, J.-O. Vogel, B. Fraboni, J. P. Rabe, N. Koch, A.
Bonfiglio “Continuous tuning of organic transistor operation from
enhancement to depletion mode by means of organic bulk
heterojunctions”
Mat.Res.Soc.Symp. Proc fall 2008
2)
B. Fraboni, R. DiPietro, A.Castaldini, A. Cavallini, A. Fraleoni
Morgera, L. Setti, I. Mencarelli, C. Femoni “Anisotropic charge
transport in organic single crystals based on dipolar
molecules”
Mat.Res.Soc.Symp. Proc. 1091, 66
(
2008)
3)
E. Orgiu, M.Taki, B. Fraboni, S. Locci, A.Bonfiglio Looking into
the Organic Semiconductor/Organic Dielectric Interface in Pentacene
Thin film Transistors: Trapping Mechanisms Characterization and
Correlation with Transistor Performances”
Mat.Res.Soc.Symp. Proc. 1029, 203
(2008)
4)
T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G.
Impellizzeri and F. Priolo “Role of the substrate doping in the
activation of Fe2+ centers in Fe
implanted InP” Mat.Res.Soc.Symp. Proc. 864, 2007
(2005)
5)
T.Cesca, A.Gasparotto, N.El Habra, A.Coati, B.Fraboni, F.Priolo,
E.C.Moreira, G.Ciatto, C.Bocchi “Incorporation of highly
concentrated iron impurities in InP by high temperature ion
implantation” Mat.Res.Soc.Symp. Proc. 719, 297
(2002)
6)
P.Chirco, M.P.Morigi, M.Zanarini, A.Cavallini, B.Fraboni,
N.Auricchio, E.Caroli, W.Dusi, P.Fougeres, M.Hage-Ali, P.Siffert “
Comparison of the radiation damage induced by thermal neutrons in
CdTe and CdZnTe detectors” Proc.SPIE Vol.3768 p.424
(1999)
7)
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez,
J.Piqueras,”Analyses of compensation related defects in
II-VIcompounds” Mat.Res.Soc.Symp. 487 269 (1998)
8)
W.Dusi, E.Caroli, P.Chirco, M.Zanarini, E.Querzola, M.Giacometti,
A.Cavallini, B.Fraboni "Study of the radiation damage induced by
high-energy gamma-rays in CdTe detectors" Mat.Res.Soc.Symp.487 377 (1998)
9)
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras
"Investigation of deep
energy levels in II-VI compounds" Mat.Res.Soc.Symp.442 605 (1997)
10)
C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo,
A.Camporese, G.Rossetto “Distribution of Fe and extended defects in
Fe-implanted InP", Microscopy of Semiconducting Materials,Ser.No.157 523 (1997) Oxford,
UK
11)
A.Castaldini, A.Cavallini, B.Fraboni, S.Binetti, M.Donghi,
S.Pizzini, G.Wagner
"Optical and electrical characterization of deep traps in erbium
doped silicon" Defect
Recognition and Image Processing in Semiconductors, Ser. No.160 297 (1997) Berlin,
Germany
12)
C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo,
A.Camporese, G.Rossetto "Influence of the dislocation loops on the
anomalous difusion of Fe implanted into InP" Defects in Semiconductors
ICDS19 258 1807
(1997)
13)
A.Carnera, B.Fraboni, A.Gasparotto, F.Priolo, A.Camporese,
G.Rossetto, C.Frigeri, A.Cassa: "Dose and doping dependence of
damage annealing in Fe MeV implanted InP" Mat.Res.Soc.Symp.396 829 (1996)
14)
A.Castaldini, A.Cavallini, B.Fraboni, J.Piqueras and L.Polenta:
"Defect energy levels in Cd-based compounds" Defect Recognition and Image
Processing in Semiconductors Ser.No 149 115 (1996)
15)
A.Castaldini, A.Cavallini, P.Fernandez, B.Fraboni, J.Piqueras and
L.Polenta:"Electrical and optical properties of defects by
complementary spectroscopies" Mat.Res.Soc.Symp.407 366 (1996)
16)
A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez and J.Piqueras:
"Influence of defects on diffusion length inhomogeneity in GaAs:Te
wafers" Defect Recognition
and Image Processing in Semiconductors, Ser. No.135 207 (1994)
17)
R.Blaikie, B.Fraboni, J.R.A.Cleaver and H.Ahmed: "A low temperature
EBIC study of quantum wires fabricated in GaAs/AlGaAs
heterostructures using ion-implanted gate" Microscopy of
Semiconducting Materials Ser. No.134, 436 (1993), Oxford,
UK
18)
R.Blaikie, K.Nakazato, B.Fraboni, D.Hasko, J.Cleaver and H.Ahmed:
"Fabrication of quantum wires and point contacts in GaAs/AlGaAs
heterostructures using Focused Ion Beam implanted gates",
Microcircuit Engineering 1990, p.233, Elsevier Publ.
(1990)
