Characterization and modeling of Silicon (Si), Silicon carbide (SiC) and Gallium Nitride (GaN) based power devices (Transistors, Diodes) reliability by means of experimental and simulation analyses:
- investigation of the trapping/detrapping mechanisms limiting performance and reliability of the power devices;
- development and/or calibration of physical models aimed at reproducing the devices degradation;
- design and development of power converter for in-circuit characterization of devices reliability.
Examples of degradation mechanisms under investigation: Negative/Positive Bias Temperature Instability, Hot-Carrier, Self-heating effects, Time Dependent Dielectric Breakdown, High Temperature Gate/Reverse Bias, etc.
