E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani, Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs, in: 69th Device Research Conference Digest, Piscataway, IEEE Publishing Services, 2011, pp. 201 - 202 (atti di: Device Research Conference (DRC), Santa Barbara CA, 20-22 June) [atti di convegno-abstract]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2011, 10, pp. 371 - 378 [articolo]
S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani, Computational study of the ultimate scaling limits of CNT tunneling devices, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 313 - 321 [articolo]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [articolo]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contributo in Atti di convegno]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]
M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]
E.Gnani; S.Reggiani; A.Gnudi; P.Parruccini; R.Colle; M.Rudan; G.Baccarani, Band-Structure Effects in Ultrascaled Silicon Nanowires, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2243 - 2254 [articolo]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 737 - 738 (atti di: 28th International Conference on the Physics of Semiconductors - (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2007, 6, pp. 90 - 96 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental Investigation on Carrier Dynamics at the Thermal Breakdown, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 1497 - 1498 (atti di: 28th International Conference on the Physics of Semiconductors (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]
