A. D'Amico; C. Di Natale; E. Martinelli; L. Sandro; G. Baccarani, Sensors small and numerous: always a winning strategy?, «SENSORS AND ACTUATORS. B, CHEMICAL», 2005, 106, pp. 144 - 152 [articolo]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs, in: Proceedings of the 34th European Solid-State Deviec Research Conference, LEUVEN, s.n, 2004, pp. 177 - 180 (atti di: European Solid-State Device Research Conference (ESSDERC 2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]
S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER, Experimental extraction of the electron impact-ionization coefficient at large operating temperatures, in: Technical Digest of the IEEE International Electron Device Meeting 2004, SAN FRANCISCO, IEEE-EDS, 2004, pp. 407 - 410 (atti di: International Electron Device Meeting (IEDM-2004), San Francisco, 13-15 Dicembre 2004) [Contributo in Atti di convegno]
S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI, Investigation about the high temperature impact-ionization coefficient in silicon, in: Proceedings of the 34th European Solid-State Device Research Conference, LEUVEN, s.n, 2004, pp. 245 - 248 (atti di: European Solid-State Device Research Conference (ESSDERC-2004), Leuven, BE, 21-23 Settembre 2004) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, in: Book of Abstracts of the IWCE10, WEST LAFAYETTE, M. Lundstrum, 2004, 1, pp. 229 - 230 (atti di: International Workshop on Computational Electronics, West Lafayette, Indiana, USA, October 24 - 27 2004) [Contributo in Atti di convegno]
M. RUDAN; E. GNANI; S. REGGIANI; G. BACCARANI, The density-gradient correction as a disguised pilot wave of de Broglie, in: Simulation of Semiconductor Processes and Devices (SISPAD 2004), VIENNA, Springer, 2004, pp. 13 - 16 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, 2-4 Settembre 2004) [Contributo in Atti di convegno]
