E. Sangiorgi; P. Palestri; S. Eminente; D. Esseni; C. Fiegna; L. Selmi, Ballistic effects in advanced MOSFETs along the Roadmap, in: Proceedings of the 4th International Conference on Semiconductor Technology, PENNINGTON, NEW JERSEY, Electrochemical Society Inc., 2005, pp. 42 - 47 (atti di: 4th International Conference on Semiconductor Technology, Shangai, China, 15-17 Marzo 2005) [Contribution to conference proceedings]
N. Barin ; M. Braccioli ; C. Fiegna ; E. Sangiorgi, Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks, in: Technical Digest of 2005 IEDM, PISCATAWAY, NJ, IEEE, 2005, pp. 623 - 626 (atti di: International Electron Devices Meeting, Washington, 5 - 7 Dicembre 2005) [Contribution to conference proceedings]
C. Fiegna; E. Sangiorgi, ULIS 2005, BOLOGNA, ARCES, Università di Bologna, 2005, pp. 169 . [Editorship]
Palestri P.; Esseni D.; Eminente S.; Fiegna C.; Sangiorgi E.; Selmi L., Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2727 - 2735 [Scientific article]
Eminente S.; Esseni D.; Palestri P.; Fiegna C.; Selmi L.; Sangiorgi E., Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2736 - 2743 [Scientific article]
P. Palestri; D. Esseni; S. Eminente; C. Fiegna; E. Sangiorgi; L. Selmi, A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs, in: IEEE, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, PISCATAWAY, NJ, IEEE, 2004, pp. 605 - 608 (atti di: 50th IEEE International Electron Devices Meeting, San Francisco, CA, DEC 13-15, 2004) [Contribution to conference proceedings]
ZAGNONI M.; GOLFARELLI A.; PROLI P.; CALLEGARI S.; TALAMELLI A.; SANGIORGI E.; TARTAGNI M., A non-invasive capacitive sensor strip for aerodynamic pressure measurement, in: VARI, Eurosensors XVIII, book of extended abstracts, ROMA, s.n, 2004, pp. . - . (atti di: Eurosensors'04, ., Settembre 2004) [Contribution to conference proceedings]
GOLFARELLI A.; ZAGNONI M.; PROLI P.; CALLEGARI S.; TALAMELLI A.; SANGIORGI E.; TARTAGNI M., Acquisition system for pressure sensor network, in: D. ROCHA, P.M. SARRO, M.J. VELLEKOOP, Proceedings of IEEE Sensors 2004, VIENNA, IEEE Press, 2004, 2, pp. 579 - 582 (atti di: IEEE Sensors 2004, , Ottobre 2004) [Contribution to conference proceedings]
CALLEGARI S.; TALAMELLI A.; ZAGNONI M.; GOLFARELLI A.; ROSSI V.; TARTAGNI M.; SANGIORGI E., Aircraft angle of attack and air speed detection by redundant strip pressure sensors, in: D. ROCHA, P.M. SARRO, M.J. VELLEKOOP, Proceedings of IEEE Sensors 2004, VIENNA, IEEE Press, 2004, 3, pp. 1526 - 1530 (atti di: IEEE Sensors 2004, ., Ottobre 2004) [Contribution to conference proceedings]
P. PALESTRI; S. EMINENTE; D. ESSENI; FIEGNA C.; E. SANGIORGI; L. SELMI, An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation, in: K. DE MEYER, N. COLLAERT, ULIS 2004 5th European Workshop on Ultimate Integration of Silicon, LEUVEN, K. De Meyer, N. Collaert, 2004, pp. 101 - 104 (atti di: 5th European Workshop on Ultimate Integration of Silicon, , ) [Contribution to conference proceedings]
N. Barin; C. Fiegna; E. Sangiorgi, Analysis of strained-silicon-on-insulator double-gate MOS structures, in: Proceeding of the 34th European Solid-State Device Research Conference ESSDERC 2004, LEUVEN, R.P. Mertens, C. L. Claeys, 2004, pp. 169 - 172 (atti di: 34th European Solid-State Device Research Conference ESSDERC 2004, Leuven Belgium, 21-23 September 2004) [Contribution to conference proceedings]
S. Eminente; D. Esseni; P. Palestri; C. Fiegna; L. Selmi; E. Sangiorgi, Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study, in: IEEE, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, PISCATAWAY, NJ, IEEE, 2004, pp. 609 - 612 (atti di: 50th IEEE International Electron Devices Meeting, San Francisco, CA, 13-15 dicembre 2004) [Contribution to conference proceedings]
N. Barin;C. Fiegna;D. Esseni;E. Sangiorgi, Evaluation of ultra-thin double gate MOSFET for the 45 nm technology node, in: Silicon-on-Insulator Technology and Devices XII, PENNINGTON, NJ, Electrochemical Society, 2004, pp. 45 - 50 (atti di: 207th ECS Meeting - Silicon-on-Insulator Technology and Devices XII, Quebec City, Canada, May 15-20) [Contribution to conference proceedings]
ZAGNONI M.; GOLFARELLI A.; PROLI P.; CALLEGARI S.; SANGIORGI E.; TARTAGNI M., Fluid dynamic sensor array in printed circuit board technology for aerospace applications, in: C. DI NATALE, A. D'AMICO, G. MARTINELLI, M. C. CAROTTA, V. GUIDI, SENSORS AND MICROSYSTEMS Proceedings of the 9th Italian Conference, FERRARA, World Scientific, 2004, pp. 267 - 272 (atti di: AISEM 2004, , Febbraio 2004) [Contribution to conference proceedings]
D. Esseni; E. Sangiorgi, Low field electron mobility in ultra-thin SOI MOSFETs: experimental characterization and theoretical investigation, «SOLID-STATE ELECTRONICS», 2004, 48, pp. 927 - 936 [Scientific article]
