A. Romani; R. P. Paganelli; M. Tartagni; E. Sangiorgi, An Energy Autonomous Switching Converter for Harvesting Power from Multiple Piezoelectric Transducers, in: Proceedings of IEEE Sensors 2010, s.l, IEEE, 2010, pp. 1173 - 1176 (atti di: IEEE Sensors 2010 Conference, Waikoloa, HI (USA), 1-4 Novembre 2010) [Contribution to conference proceedings]
I. Semenikhin; M. Zanuccoli; V. Vyurkov; E. Sangiorgi; C. Fiegna, Application of RCWA method to optoelectronic numerical simulations of 2D nanostructures, in: IEEE 4th International Nanoelectronics Conference (INEC), 2011, s.l, IEEE, 2010, pp. 1 - 2 (atti di: IEEE 4th International Nanoelectronics Conference (INEC), 2011, Taiwan, 21-24 June 2011) [Abstract]
Bufler F.M.; Aubry-Fortuna V.; Bournel A.; Braccioli M.;
Dollfus P.; Esseni D.; Fiegna C.; Gamiz F.; De Michielis M.;
Palestri P.; Saint-Martin J.; Sampedro C.; Sangiorgi E.;
Selmi L.; Toniutti P., Comparison of semiclassical transport
formulations including quantum corrections for
advanced devices with High-K gate stacks, in: Proceedings of the 14th International Workshop on Computational Electronics IWCE. 2010, PISCATAWAY, IEEE, 2010, pp. 1 - 4 (atti di: 14th International Workshop on Computational Electronics IWCE., Pisa, Italy., October 27-29, 2010) [Contribution to conference proceedings]
Sangiorgi E.; Alexander C.; Asenov A.; Aubry-Fortuna V.; Baccarani G.; Bournel A.; Braccioli M.; Cheng B.; Dollfus P.; Esposito A.; Esseni D.; Fenouillet-Beranger C.; Fiegna C.; Fiori G.; Ghetti A.; Iannaccone G.; Martinez A.; Majkusiak B.; Monfray S.; Palestri P.; Peikert V.;
Reggiani S.; Riddet C.; Saint-Martin J.; Schenk A.; Selmi L.; Silvestri L.; Toniutti P.; Walczak J.;, Drain current computation in nanoscale nMOSFETs: Comparison of transport models, in: Proceedings (MIEL), 2010 27th International Conference on Microelectronics, PISCATAWAY, IEEE, 2010, pp. 3 - 7 (atti di: 27th International Conference on Microelectronics, Nis, May 2010) [Contribution to conference proceedings]
I. Semenikhin; V. Vyurkov; M. Zanuccoli; E. Sangiorgi; C. Fiegna, Efficient Implementation of the Fourier Modal Method (RCWA) for the Optical Simulation of Optoelectronics Devices, in: 2010 14th International Workshop on Computational Electronics IWCE, s.l, IEEE, 2010, pp. 1 - 4 (atti di: 2010 14th International Workshop on Computational Electronics IWCE, Pisa, Italy, October 27-29, 2010) [Contribution to conference proceedings]
Claudio Fiegna; Yang Yang; Enrico Sangiorgi; Anthony G. O’Neill, Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 233 - 244 [Scientific article]
M. Braccioli; C. Fiegna; E. Sangiorgi, Comparative analysis of self-heating in different SOI architectures, in: EuroSOI 2008 Proceedings, SINE LOCO, sine nomine, 2008, pp. 31 - 32 (atti di: EuroSOI 2008, Cork, Irlanda, Gennaio 23-25 2008) [Contribution to conference proceedings]
N. Zanolla; D. Siprak; P. Baumgartner; E. Sangiorgi; C. Fiegna, Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs, in: Proceedings of the 9th International Conference on Ultimate integration on Silicon, PISCATAWAY, NJ 08855-1331, IEEE, 2008, pp. 137 - 140 (atti di: 9th International Conference on Ultimate integration on Silicon - ULIS 2008, Udine, 13-14 marzo 2008) [Contribution to conference proceedings]
M. Braccioli; P. Palestri; M. Mouis ; T. Poiroux; M. Vinet; G. Le Carval;
C. Fiegna; E. Sangiorgi; S. Deleonibus, Monte-Carlo simulation of MOSFETs with band offsets in the source and drain, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 506 - 513 [Scientific article]
S. Markov; S. Roy; C. Fiegna; E. Sangiorgi; A. Asenov, On the sub-nm EOT scaling of high-K gate stacks, in: Proceedings of the 9th Internationla Conference on Ultimate Integration on Silicon, PISKATAWAY, NJ 08855-1331, IEEE, 2008, pp. 99 - 102 (atti di: 9th Internationla Conference on Ultimate Integration on Silicon, Udine, 13-14 Marzo 2008) [Contribution to conference proceedings]
M. Braccioli; G. Curatola; Y. Yang; E. Sangiorgi; C. Fiegna, Simulation of self-heating effects in 30 nm gate length FinFET, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, PISCATAWAY, NJ 08855-1331, IEEE, 2008, pp. 71 - 74 (atti di: 9th International Conference on Ultimate Integration on Silicon - ULIS 2008, Udine, 13-14 marzo 2008) [Contribution to conference proceedings]
S. Markov; P. V. Sushko; S. Roy; C. Fiegna; E. Sangiorgi; A. L. Shluger; A. Asenov, Si–SiO2 interface band-gap transition – effects on MOS inversion layer, «PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE», 2008, 205, pp. 1290 - 1295 [Scientific article]
N. Barin; M. Braccioli; C. Fiegna; E. Sangiorgi, Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2007, 6, pp. 421 - 430 [Scientific article]
S. Markov ; N. Barin; C. Fiegna; S. Roy; E. Sangiorgi; A. Asenov, Analysis of Silicon Dioxide Interface Transition Region in MOS Structures, in: Simulation of Semiconductor Processes and Devices, WIEN NEW YORK, Springer Verlag, 2007, pp. 149 - 152 (atti di: 12th International Conference on Simulation of Semiconductor Processes and Devices, Vienna, 25 - 27 settembre 2007) [Contribution to conference proceedings]
P. Palestri; N. Barin; D. Brunel; C. Busseret; A. Campera; P. A. Childs; F. Driussi; C. Fiegna; G. Fiori; R. Gusmeroli; G. Iannaccone; M. Karner; H. Kosina; A. L. Lacaita; E. Langer; B. Majkusiak; C. Monzio Compagnoni; A. Poncet; E. Sangiorgi; L. Selmi; A. S. Spinelli; J. Walczak, Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 106 - 114 [Scientific article]
