M. Rudan; E. Gnani; S. Reggiani; G. Baccarani, Extension of the R-Sigma method to any order, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2007, 6, pp. 251 - 254 [articolo]
M. Rudan; R. Katilius; S. Reggiani; E. Gnani; G. Baccarani, Impact-Ionization Coefficient in Silicon at High Fields – A Parametric Approach, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 2 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G. Baccarani, Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2204 - 2212 [articolo]
S. Reggiani; L. Silvestri; A. Cacciatori; E. Gnani; A. Gnudi; G. Baccarani, Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions, in: Technical digest of the IEEE International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: IEEE International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical transport in silicon cylindrical nanowire FETs including surface roughness, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 2 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), LEUVEN, s.n, 2007, pp. 33 - 38 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgum, 15-16 March, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of device performance and scaling capability of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2006), MONTEREY, CA, s.n, 2006(atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Monterey CA, 6-8 September) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of device performance and scaling properties of cylindrical nanowires (CNW) and carbon nanotube (CNT) transistors, in: International Conference on the Physics of Semiconductors (ICPS-28), VIENNA, s.n, 2006, 28, pp. 338 - 338 (atti di: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, 24-28 July) [atti di convegno-abstract]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Design considerations and comparative investigation of ultra-thin SOI, double-gate and cylindrical nanowire FETs, in: Proceedings of the 36th European Solid-State Device Research Conference, MONTREUX, s.n, 2006, pp. 371 - 374 (atti di: European Solid-State Device Research Conference (ESSDERC 2006), Montreux, 19-21 september) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of band-structure modification in silicon nanowires with small diameters, in: Proceedings of the 36th European Solid-State Device Research Conference, MONTREUX, s.n, 2006, pp. 170 - 173 (atti di: 36th European Solid-State Device Research Conference (ESSDERC 2006), Montreux, 19-21 September) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of high-κ (HfO) gate dielectric in double-gate and cylindrical-nanowire MOSFETs scaled to the ultimate technology nodes, in: IEEE 2006 Silicon Nanoelectronics Workshop, HONOLULU, HAWAII, s.n, 2006, 11, pp. 121 - 122 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 11-12 June 2006) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Rudan M.; Baccarani G., Effects of the band-structure modification in silicon nanowires with small diameters, in: ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, IEEE Computer Society, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2006, pp. 170 - 173 (atti di: ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, che, 2006) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Effects of the low-field mobility in single-gate and double-gate ultrathin-body MOSFETs scaled to the ultimate technology nodes, in: IEEE 2006 Silicon Nanoelectronics Workshop, HONOLULU, HAWAII, s.n, 2006, 11, pp. 33 - 34 (atti di: IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, 11-12 June 2006) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos and M. Stecher, Experimental investigation on carrier dynamics at the thermal breakdown, in: International Conference on the Physics of Semiconductors (ICPS-28), VIENNA, s.n, 2006, 28(atti di: 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, 24-28 July) [atti di convegno-abstract]
M. Rudan; S. Reggiani; E. Gnani; G. Baccarani, Extension of the R-Sigma method to any order, in: Book of Abstracts of the 11th International Workshop on Computational Electronics (IWCE-11)., VIENNA, Vienna University of Technology, 2006, pp. 295 - 296 (atti di: IWCE-11, Vienna (Austria), 25-27 maggio 2006) [Contributo in Atti di convegno]
