G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs, «JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE», 2008, 5, pp. 1145 - 1151 [articolo]
M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]
J. Fu; N. Singh; K.D. Buddharaju; S.H.G. Teo; C. Shen; Y. Jiang; C.X. Zhu; M.B. Yu; G.Q. Lo; N. Balasubramanian; D.L. Kwong; E. Gnani; G. Baccarani, Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell, «IEEE ELECTRON DEVICE LETTERS», 2008, 29, pp. 518 - 521 [articolo]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, UDINE, s.n, 2008, pp. 121 - 124 (atti di: 9th International Con-ference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March, 2008.) [Contributo in Atti di convegno]
Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G., Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon, 2008, pp. 129 - 132 (atti di: 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, Italy, 2008) [Contributo in Atti di convegno]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 129-132, 2008., UDINE, s.n, 2008, pp. 129 - 132 (atti di: 9th International Conference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March 2008) [Contributo in Atti di convegno]
M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]
E.Gnani; S.Reggiani; A.Gnudi; P.Parruccini; R.Colle; M.Rudan; G.Baccarani, Band-Structure Effects in Ultrascaled Silicon Nanowires, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2243 - 2254 [articolo]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 737 - 738 (atti di: 28th International Conference on the Physics of Semiconductors - (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Effects of High-k (HfO2) Gate Dielectrics in Double-Gate and Cylindrical-Nanowire FETs Scaled to the Ultimate Technology Nodes, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2007, 6, pp. 90 - 96 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental Investigation on Carrier Dynamics at the Thermal Breakdown, in: AIP Conference Proceedings, s.l, s.n, 2007, 893, pp. 1497 - 1498 (atti di: 28th International Conference on the Physics of Semiconductors (ICPS 2006), Vienna, Austria, 24-28 July, 2006) [Contributo in Atti di convegno]
