E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fub; N. Singh; G.Q. Lo; D.L. Kwong, Modeling of gate-all-around charge trapping SONOS memory cells, «SOLID-STATE ELECTRONICS», 2010, 54, pp. 997 - 1002 [articolo]
S. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise, Numerical investigation of the total SOA of trench field-plate LDMOS devices, in: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), BOLOGNA, IEEE, 2010, pp. 111 - 114 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, Italy, 6-8 September 2010) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Steep-Slope Nanowire FET with a Superlattice in the Source Extension, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC-2010), Seville, Spain, 14-16 September, 2010., SEVILLE, IEEE, 2010, pp. 380 - 383 (atti di: European Solid-State Device Research Confe-rence (ESSDERC-2010),, Seville, Spain, 14-16 September) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET), in: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), BOLOGNA, IEEE, 2010, pp. 69 - 72 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, 6-8 September) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Superlattice-based steep-slope switch, in: Proc. of the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Piscataway, IEEE PRESS, 2010, pp. 1227 - 1230 (atti di: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1-4 november) [Contributo in Atti di convegno]
S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement, «SOLID-STATE ELECTRONICS», 2010, 54, pp. 950 - 956 [articolo]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, An investigation of performance limits of conventional
and tunneling graphene-based transist, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2009, DOI 10.1007/s10825-009-0282-2, pp. 1 - 10 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions, in: 2009 International Conference on Simulation of Semiconductor Processes and Devices, S. DIEGO, CALIFORNIA, s.n, 2009, pp. 226 - 229 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, San Diego, California, 9-11 September, 2009) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Ballistic Ratio and Backscatterig Coefficient in Short-Channel NW-FETs, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 476 - 479 (atti di: European Solid-State Device Research Conference (ESSDERC-2009), Athens, Greece, 14-18 September, 2009) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Effective Mobility and Backscattering Coefficient in Short Gate-Length Nanowire FETs, in: Global-COE PICE International Symposium on Silicon Nano Devices in 2030, TOKYO, Tokyo Institute of Technology, 2009, pp. 18 - 19 (atti di: International Symposium on Silicon Nano Devices in 2030, Tokyo, Japan, 13-14 October, 2009) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seethara-man, Explanation of the rugged LDMOS behavior by means of numerical analysis, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2009, 56, pp. 2811 - 2818 [articolo]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene-Based High-Performance Nanoelectronic Devices, in: Extended Abstracts of WOCSDICE 2009, MALAGA, s.n, 2009, pp. 2 - 9 (atti di: 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, Malaga, Spain, 17-20 maggio, 2009) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman, Investigation on saturation effects in the rugged LDMOS transistor, in: Proc. of the 21st ISPSD 2009, BARCELONA, s.n, 2009, pp. 208 - 211 (atti di: 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD 2009), Barcelona, Spain, 14-17 giugno, 2009) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, in: Proc. 13th International Workshop on Computational Electronics, BEIJING, s.n, 2009, pp. 1 - 4 (atti di: 13th International Workshop on Computational Electronics (IWCE 2009), Beijing, China, 27-29 maggio, 2009) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fu; N. Sing; G.Q. Lo; D. L. Kwong, Modeling of Nonvolatile Gate-All-Around Charge Trapping SONOS Memory Cells, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 280 - 283 (atti di: European Solid-State Device Research Conference (ESSDERC 2009), Athens, 14-18 September, 2009) [Contributo in Atti di convegno]
