S. Poli; S. Reggiani; R. K. Sharma; G. Baccarani; E. Gnani; A. Gnudi; M. Denison, TCAD optimization of a dual N/P-LDMOS transistor, in: Proceedings of the 41st European Solid-State Device Research Conference, Piscataway, IEEE Publishing Services, 2011, pp. 247 - 250 (atti di: (ESSDERC 2011), Helsinki, 13-15 September 2011) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors, «IEEE ELECTRON DEVICE LETTERS», 2011, 32, pp. 791 - 793 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Theory of the Junctionless Nanowire FET, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2011, 58, pp. 2903 - 2910 [articolo]
Y. Sun; H.Y. Yu; N. Singh; K.C. Leong; E. Gnani; G. Baccarani; G.Q. Lo; D.L. Kwong, Vertical-Si-Nanowire-Based Nonvolatile Memory Devices With Improved Performance and Reduced Process Complexity, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2011, 58, pp. 1329 - 1335 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani., A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 3287 - 3294 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 1567 - 1574 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 1575 - 1582 [articolo]
S. Reggiani; S. Poli; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman, Analysis of HCS in STI-based LDMOS transistors, in: Proceedings of the International Reliability Physics Symposium (IRPS 2010), ANAHEIM, CA, IEEE, 2010, pp. 881 - 884 (atti di: International Reliability Physics Symposium (IRPS 2010), Anaheim, Ca, 2-6 June, 2010) [Contributo in Atti di convegno]
I. Imperiale; S. Bonsignore; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Computational study of graphene nanoribbon FETs for RF applications, in: IEDM Technical Digest, SAN FRANCISCO, CA, s.n, 2010, pp. 732 - 735 (atti di: International Electron Device Meeting 2010, San Francisco, CA, Dec. 6-8, 2010) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2010, 57, pp. 336 - 343 [articolo]
I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani., Full-Quantum Calculations of Low-Field Channel Mobility in
Graphene Nanoribbon FETs Including Acoustic Phonon
Scattering and Edge Roughness Effects, in: Proc. of the 11th International Conference on Ultimate Integration on Silicon, GLASGOW, SCOTLAND, s.n, 2010, pp. 57 - 60 (atti di: 11th International Conference on Ultimate Integration on Silicon (ULIS 2010)., Glasgow, Scotland, 18-19 March, 2010) [Contributo in Atti di convegno]
S. Poli; A. Loi; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman., Hot-carrier Stress induced degradation in Multi-STIFinger
LDMOS: an experimental and numerical insight, in: Conference Proceedings of the ESSDERC 2010, SEVILLE, F. Gamiz and A. Godoy, 2010, pp. 269 - 272 (atti di: 40th European Solid-State Device Research Conference, Seville, Spain, 14-16 September, 2010) [Contributo in Atti di convegno]
M. Rudan; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Improving the accuracy of the Schroedinger-Poisson solution in CNWs and CNTs, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), NEW YORK, IEEE, 2010, pp. 307 - 310 (atti di: Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, September 6-8, 2010) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; M. Denison; G. Baccarani; E. Gnani; A. Gnudi; S. Pendharkar; R. Wise; S. Seetharaman, Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor, in: International Symposium on Power Semiconductor Devices & ICs (ISPSD-2010), HIROSHIMA, IEEE, 2010, pp. 311 - 314 (atti di: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & ICs (ISPSD-2010), Hiroshima, 6-10 June) [Contributo in Atti di convegno]
L. Silvestri; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani., Mobility Model for Electrons and Holes in FinFETs with
High-k Stacks, Metal Gate and Stress, in: Porc. of the 11th International Conference on Ultimate Integration on Silicon, GLASGOW, SCOTLAND, s.n, 2010, pp. 73 - 76 (atti di: 11th International Conference on Ultimate Integration on Silicon (ULIS), Glasgow, Scotland, 18-19 march, 2010) [Contributo in Atti di convegno]
