Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, A Coherent Extension of the Transport Equations in Semiconductors Incorporating the Quantum Correction: Part II – Collective Transport, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2005, 4, pp. 503 - 509 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique, «IEEE ELECTRON DEVICE LETTERS», 2005, 26, pp. 916 - 918 [articolo]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, A quantum mechanical analysis of the electrostatics in multiple-gate FETs, in: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), TOKYO, IEEE EDS Japan Chapter, 2005, pp. 291 - 294 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2005), Tokyo, Japan, 1-3 Settembre 2005) [Contributo in Atti di convegno]
M. Rudan; S. Reggiani; E. Gnani; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Experimental validation of a new analytical model for the position-dependent Hall voltage in semiconductor devices, in: M. BRILLOUET, S. CRISTOLOVEANU, G. GHIBAUDO, T. SKOTNICKI, Proceedings of ESSDERC 2005, GRENOBLE, s.n, 2005(atti di: European Solid-State Device Research Conference, Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]
A. Marchi; E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, Investigating the performance limits of silicon nanowires and carbon nanotube FETs, in: ULIS 2005, BOLOGNA, s.n, 2005(atti di: 6th International Conference on Ultimate Integration of Silicon (ULIS 2005), Bologna, 7-9 Aprile 2005) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher, Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2005, 52, pp. 2290 - 2299 [articolo]
Baccarani G; Gnani E, Memory Devices: Part I – Volatile Memories, in: Encyclpedia of Condensed Matter Physics, OXFORD, Elsevier, 2005, pp. 337 - 347 [voce di enciclopedia/dizionario]
G. BACCARANI; E. GNANI, Memory Devices: Part I – Volatile Memories, in: ENCYCLPEDIA OF CONDENSED MATTER PHYSICS, OXFORD, Elsevier, 2005, pp. 1621 - 1622 [capitolo di libro]
G. BACCARANI; E. GNANI, Memory Devices: Part II – Non-Volatile Memories, in: F. BASSANI; J. LIEDL; P. WYDER, ENCYCLOPEDIA OF CONDENSED MATTER PHYSICS, OXFORD, Elsevier, 2005, pp. 1623 - 1636 (Encyclopedia of Condensed Matter Physiscs) [capitolo di libro]
Baccarani G; Gnani E, Memory Devices: Part II – Nonvolatile Memories, in: Encyclopedia of Condensed Matter Physics, OXFORD, Elsevier, 2005, pp. 324 - 337 [voce di enciclopedia/dizionario]
E. Gnani; S. Reggiani; M. Rudan; G. Baccarani, On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2005, 4, pp. 71 - 74 [articolo]
S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher, Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 411 - 414 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 11-15 Settembre 2005) [Contributo in Atti di convegno]
E. Gnani; A. Marchi; S. Reggiani; M. Rudan; G. Baccarani, Quantum-mechanical analysis of the electrostatics in silicon-nanowire and carbon-nanotube FETs, in: Proceedings of the European Solid-State Device Research Conference (ESSDERC 2005), GRENOBLE, s.n, 2005, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2005), Grenoble, 13-15 Settembre 2005) [Contributo in Atti di convegno]
M. Rudan; A. Marchi; R. Brunetti; S. Reggiani; E. Gnani, The R-Sigma Approach to Tunneling in Nanoscale Devices, in: Proc. of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., CHICAGO, IL, IEEE, 2005, pp. 45 - 46 (atti di: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14)., Chicago, July 24-29, 2005) [Contributo in Atti di convegno]
Gnani E.; Reggiani S.; Rudan M.; Baccarani G., A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs, in: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, 2004, pp. 177 - 180 (atti di: ESSCIRC 2004 - Proceedings of the 34th European Solid-State Device Research Conference, Leuven, bel, 2004) [Contributo in Atti di convegno]
