S. Pandey; D. Cavalcoli; A. Cavallini, Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy, «APPLIED PHYSICS LETTERS», 2013, 102, pp. 142101 - 142105 [articolo]
Filippo Fabbri;Enzo Rotunno;Laura Lazzarini;Daniela Cavalcoli;Antonio Castaldini;Naoki Fukata;Keisuke Sato;Giancarlo Salviati;Anna Cavallini, Preparing the way for doping wurtzite silicon nanowires while retaining the phase, «NANO LETTERS», 2013, 13, pp. 5900 - 5906 [articolo]
A. Minj; D. Cavalcoli; A. Cavallini; P. Gamarra;
M.A. di Forte Poisson, Strain distribution and defect analysis in
III-nitrides by dynamical AFM analysis, «NANOTECHNOLOGY», 2013, 24, pp. 145701 - 145708 [articolo]
Anna Cavallini; Daniela Cavalcoli ; Laura Polenta, Advanced Characterization Techniques, in: PIZZINI S., Advanced Silicon Materials for Photovoltaic Applications, CHICHESTER, WEST SUSSEX, John Wiley & Sons, 2012, pp. 189 - 210 [capitolo di libro]
S Pandey; B. Fraboni; D. Cavalcoli; A. Minj; A.Cavallini, Current-voltage measurement of
AlxIn1-xN/AlN/GaN heterostructures, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 986 - 988 [articolo]
A. Minj; S. Pandey; O. Tuna; D. Cavalcoli; B. Fraboni; A. Cavallini; C. Giesen; M. Heuken, Defect investigation in In(Ga,Al)N-related alloy by SPM methodology, in: International Conference on Extended Defects in Semiconductors, s.l, s.n, 2012, pp. 82 - 82 (atti di: International Conference on Extended Defects in Semiconductors EDS2012, Tessaoniki, Greece, 24-29 June 2012) [atti di convegno-abstract]
D. Cavalcoli; Albert Minj ; Anna Cavallini, Dislocations in III-nitrides investigated by atomic force microscopy, in: International Conference on Extended Deects in Semiconductors, Book of Abstract, s.l, s.n, 2012, 1, pp. 80 - 80 (atti di: International Conference on Extended Deects in Semiconductors, EDS 2012, Thessaloniki-Greece, 24-29 June 2012) [atti di convegno-abstract]
S. Pandey; D. Cavalcoli; Minj; Fraboni; Cavallini;P.Gamarra; M. A. Poisson, Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy, «JOURNAL OF APPLIED PHYSICS», 2012, 112, pp. 123721 - 123726 [articolo]
S. Pandey; D. Cavalcoli; B. Fraboni; A. Cavallini; T. Brazzini; F Calle, Erratum: Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2012, 100, pp. 219901 - 219901 [articolo]
A. Minj; D.Cavalcoli; A.Cavallini, Investigation of the properties of
In-related alloys by AFM, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 982 - 985 [articolo]
S. Pandey ; D. Cavalcoli ; A. Minj; B. Fraboni ; A. Cavallini ;
|D. Skuridina ; P. Vogt; M Kneissl., Mobility-limiting mechanisms in polar semiconductor heterostructures, «ACTA MATERIALIA», 2012, 60, pp. 3176 - 3180 [articolo]
A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle, Nanocrack-induced leakage current in AlInN/AlN/GaN, «SCRIPTA MATERIALIA», 2012, 66, pp. 327 - 331 [articolo]
Pandey, S.*; Cavalcoli, D.; Fraboni, B.; Cavallini, A.; Brazzini, T.; Calle, F., Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2012, 100, Article number: 152116, pp. 152116 - 152120 [articolo]
A. Minj; D. Cavalcoli; A. Cavallini, Structural and local electrical properties of AlInN/AlN/GaN heterostructures, «PHYSICA. B, CONDENSED MATTER», 2012, 407, pp. 2838 - 2840 [articolo]
J. Crocco; H. Bensalah; Q. Zheng; V. Corregidor; E. Avles; A. Castaldini; B. Fraboni; D. Cavalcoli; A. Cavallini; O. Vela; E. Dieguez, STUDY OF ASYMMETRIES OF CZT DEVICES INVESTIGATED USING PICTS, RBS, SPS, AND GAMMA RAY SPECTROSCOPIES, «JOURNAL OF APPLIED PHYSICS», 2012, 112, pp. 074503 - 074512 [articolo]
