Foto del docente

Beatrice Fraboni

Full Professor

Department of Physics and Astronomy "Augusto Righi"

Academic discipline: FIS/03 Physics of Matter

Head of Collegio Superiore

Director of Istituto di Studi Superiori

Publications

T.Cesca; A.Gasparotto; B.Fraboni; F.Priolo, Annealing behaviour of high temperature implanted Fe impurities in n- InP, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2004, 216, pp. 105 - 108 [Scientific article]

B.Fraboni; A.Cavallini; W.Dusi, Damage induced by ionizing radiation on CdZnTe and CdTe detectors, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2004, 51, pp. 1209 - 1214 [Scientific article]

A.Cavallini; B.Fraboni; F.Capotondi; L.Sorba; G.Biasiol, Deep levels in MBE grown AlGaAs/GaAs heterostructures, «MICROELECTRONIC ENGINEERING», 2004, 73, pp. 954 - 959 [Scientific article]

M.Zanarini; P.Chirco; W.Dusi; N.Auricchio; A.Cavallini; B.Fraboni; P.Siffert; M.Bianconi, Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2004, 213, pp. 315 - 319 [Scientific article]

B.Fraboni; A.Cavallini; N.Auricchio; M.Zanarini; W.Dusi; P.Siffert, Recovery of radiation damage in CdTe and CdZnTe detectors, in: 14th International Workshop on Room Temperature X and gamma-ray Semiconductor Detectors, NSS-RTDS, ROMA, E.Perillo, 2004(atti di: 14th International Workshop on Room Temperature X and gamma-ray Semiconductor Detectors, NSS-RTDS, Roma,Italia, Ottobre 2004) [Contribution to conference proceedings]

F. Capotondi; G. Biasiol; I. Vobornik; F. Giazotto; L. Sorba; A. Cavallini; B. Fraboni, Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well, «JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B», 2004, 22, pp. 702 - 706 [Scientific article]

Mendez B.; Piqueras J.; Cavallini A.; Fraboni B., Study of defects in implanted GaAs: Te by cathodoluminescence, «MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY», 1994, 24, pp. 138 - 140 [Scientific article]

Cavalcoli D.; Cavallini A.; Fraboni B., The injection dose effect on the evaluation of bulk and surface parameters in semiconductors, «PHILOSOPHICAL MAGAZINE. B. PHYSICS OF CONDENSED MATTER. STRUCTURAL, ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES», 1994, 70, pp. 1095 - 1110 [Scientific article]

Cavallini A.; Fraboni B.; Cavalcoli D., Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments, «JOURNAL OF APPLIED PHYSICS», 1992, 71, pp. 5964 - 5968 [Scientific article]

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