Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs, «POWER ELECTRONIC DEVICES AND COMPONENTS», 2025, 10, Article number: 100080 , pp. 1 - 7 [Scientific article]Open Access
Balestra, L.; Gnani, E.; Rossetti, M.; Depetro, R.; Reggiani, S., Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2024, 71, pp. 2565 - 2569 [Scientific article]Open Access
Balestra, L.; Gnani, E.; Reggiani, S.; Rossetti, M.; Depetro, R., Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound, in: Proceedings of the 2024 IEEE Latin American Electron Devices Conference, 345 E 47TH ST, NEW YORK, NY 10017 USA, IEEE, 2024, pp. 286 - 289 (atti di: 2024 IEEE Latin American Electron Devices Conference, LAEDC 2024, Guatemala City, 8 May 2024) [Contribution to conference proceedings]
Balestra L.; Cirioni L.; Cavallini A.; Reggiani S.; Rossetti M.; Gallo M.; Guarnera S.; Depetro R., Anomalous increase of leakage current in epoxy moulding compounds under wet conditions, «SOLID-STATE ELECTRONICS», 2023, 208, Article number: 108728 , pp. 1 - 4 [Scientific article]Open Access
Ercolano, F.; Balestra, L.; Krause, S.; Leone, S.; Streicher, I.; Waltereit, P.; Dammann, M.; Reggiani, S., Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations, in: IEEE International Integrated Reliability Workshop Final Report, Piscataway, Institute of Electrical and Electronics Engineers Inc., 2023, pp. 1 - 7 (atti di: 2023 IEEE International Integrated Reliability Workshop, IIRW 2023, South Lake Tahoe, CA, USA, 2023) [Contribution to conference proceedings]Open Access
Zunarelli L.; Balestra L.; Reggiani S.; Sankaralingam R.; Dissegna M.; Boselli G., TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2023, 2023-, pp. 1 - 6 (atti di: 61st IEEE International Reliability Physics Symposium, IRPS 2023, usa, 2023) [Contribution to conference proceedings]
Balestra L.; Gnani E.; Reggiani S., Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure, «JOURNAL OF APPLIED PHYSICS», 2022, 132, Article number: 215108 , pp. 1 - 6 [Scientific article]Open Access
Balestra L.; Reggiani S.; Gnani E.; Gnudi A., Group velocity of electrons in 4H-SiC from Density Functional Theory simulations, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108338 , pp. 1 - 4 [Scientific article]Open Access
Balestra, L.; Reggiani, S.; Gnudi, A.; Gnani, E.; Dobrzynska, J.; Vobecky, J., On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon, «SOLID-STATE ELECTRONICS», 2022, 193, Article number: 108284 , pp. 1 - 7 [Scientific article]Open Access
Luigi Balestra; Susanna Reggiani; Antonio Gnudi; Elena Gnani; Jan Vobeck{'{y}}; Umamaheswara Vemulapati, Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach, in: ISPS' 21 Proceedings, 2021, pp. 49 - 53 (atti di: 15th INTERNATIONAL SEMINAR ON POWER SEMICONDUCTORS, Prague, Czech Republic, 26 August - 27 August 2021) [Contribution to conference proceedings]
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Dobrzynska J.; Vobecky J., Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2021, 9, Article number: 9404302 , pp. 431 - 440 [Scientific article]Open Access
Balestra, Luigi; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Dobrzynska, Jagoda; Vobecky, Jan, On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Caen, France, 1-3 Sept. 2021) [Contribution to conference proceedings]
Reggiani, Susanna; Balestra, Luigi; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, Jagoda; Vobecky, Jan; Tosi, Carlo, TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes, «IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS», 2021, 9, Article number: 8801920 , pp. 2155 - 2162 [Scientific article]
Luigi Balestra, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Jagoda Dobrzynska, Jan Vobecký, TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2020, 67, Article number: 9166703 , pp. 4645 - 4648 [Scientific article]Open Access
Balestra L.; Reggiani S.; Gnudi A.; Gnani E.; Baccarani G.; Dobrzynska J.; Vobecky J., Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers, in: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Institute of Electrical and Electronics Engineers Inc., 2019, 2019-, pp. 1 - 4 (atti di: 24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019, Palazzo di Toppo Wassermann, ita, 2019) [Contribution to conference proceedings]
