Giorgio Baccarani received the Electrical Engineering degree in
1967 and the Physics degree in 1969 from the University of Bologna.
Associate Professor in Quantum Electronics since 1972 and full
Professor in Electronics since 1980, he is currently Professor Emeritus of Alma Mater and is in charge of the course of Nanoelettronica M.
His scientific activity has been devoted to the physics and
modeling of electron devices, with special emphasis on transport
models in semiconductors and numerical analysis techniques. He
devised the generalized scaling theory, which led the
evolution of microelectronics up to the first decade of the current century. He devised new
simulation techniques of electron devices in two and three
dimensions and contributed to the development of the hydrodynamic
model and to the deterministic solution of the Boltzmann transport
equation based on the expansion of the distribution function in
spherical harmonics. These numerical methods prompted a better
understanding of the mechanisms underlying energy-threshold
effects, such as impact ionization and hot-electron injection into
the gate oxide.
More recently, G.B. has been involved in the study of quantum-confined
devices, such as silicon nanowires and carbon nanotubes, as well as steep-slope tunnel and superlattice FETs for low-power applications, which represent possible candidates for future
generations of the nanoelectronic technology. He is author or
co-author of about 300 published papers and of four volumes;
participated in seven European projects as a partner leader and
coordinated two of them as a project leader. He has been visiting
on a one-year assignment a few international research laboratories,
such as the Bell Labs in Murray-Hill NJ, and the IBM Watson
Research Center in Yorktown Heights, NY.
G.B. has been the founder and director of the “Ercole De Castro” Research Center on
Electronic Systems (ARCES), and is a member of the Bologna-Institute Academy
of Science and of the European Academy of Sciences. In the past, he was chairman of the Scientific Committee of the Institute
for Microelectronics and Microsystems of the National Council of
Research (CNR-IMM) and of the ESSDERC/ESSCIRC steering
committee. In addition, he has been member of the scientific advisory board of the Institute of Microelectronics (IME) of Singapore; member of the scientific committees of MEDEA+, of the
ITC-IRST Institute, and of the technology council of
ST-Microelectronics. At European level he has been a member of the
Long-Term Research Advisory Group; of the Joint NSF-CEC Strategy
Group, and of the Pathfinder Committee.
Since 1999 GB is a Fellow of the IEEE and is presently a Life-Fellow. He received the IEEE Cledo Brunetti Award in year 2013 "for contributions to the scaling theory and modeling of metal oxide semiconductor (MOS) devices". He has been editor of the
IEEE Transactions on Electron Devices;
member of the Jack Morton and, later on, Andy Grove award
committees, of the Electron-Device
Society Administrative Committee, and of the EDS Fellows
Committee.
In 2004 he was awarded the medal of honor by the President of the
Italian Republic for “contributions to science, culture and
art”.
