Modelling and numerical simulation of semiconductor transistors and sensors
1) Numerical models for the simulation of quantum confinement and transport effects in transistors based on silicon, III-V compound semiconductors, carbon nanotubes and nanoribbons and two-dimensional semiconductors, through the solution of Schroedinger equation or by means of non-equilibrium Green’s functions, with various Hamiltonian models. Applications to the investigation of the properties of advanced devices, such as tunnel field-effect transistors and devices for quantum computing.
2) Simulation of gas sensors based on carbon nanotubes, mainly via TCAD tools.
Design of analog/digital circuits in smart power technology for
1) ultra-low power radios for IoT applications (wakeup radios)
2) applications of in-memory computing based on arrays of PCM memories
