E. Gnani; A. Gnudi; S. Reggiani; M. Luisier; G. Baccarani, Band Effects on the transport characteristics of ultra-scaled SNW-FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2008, 7, pp. 700 - 709 [Scientific article]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Carbon-based Nanoelectronic Devices for High-Performance Logic Applications, in: The 17th European Workshop on Heterostructure Technology Book of Abstracts, VENICE, CLEUP, 2008, pp. 3 - 7 (atti di: 17th European Workshop on Heterostructure Technology (HETECH 2008), Venice, 3-5 November 2008) [Contribution to conference proceedings]
S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani, Computational study of the ultimate scaling limits of CNT tunneling devices, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 313 - 321 [Scientific article]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani, Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study, in: Proceedings of the IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems, BOSTON, MA, IEEE Press, 2008, pp. 7 - 10 (atti di: IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008), Boston, MA, 29-30 September 2008) [Contribution to conference proceedings]
J. Iannacci; M. Bartek; J. Tian; R. Gaddi; A. Gnudi, Electromagnetic optimization of an RF-MEMS
wafer-level package, «SENSORS AND ACTUATORS. A, PHYSICAL», 2008, A 142, pp. 434 - 441 [Scientific article]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges, in: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, BEIJING, IEEE Press, 2008, I, pp. 365 - 369 (atti di: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, 21-23 October, 2008) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani, Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering, in: Conference Digest of the 66th IEEE Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 105 - 106 (atti di: 66th IEEE Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June 2008) [Contribution to conference proceedings]
J. Iannacci; B. Margesin; F. Giacomozzi; E. Brusa; M. Gh. Munteanu; A. Gnudi, Improvements in Accuracy of RF-MEMS Electromechanical Simulation within Cadence, in: Proc. of the 5th European Congress on Computational Methods in Applied Sciences and Engineering (ECCOMAS 2008), s.l, s.n, 2008, pp. MS 151 - MS 151 (atti di: 5th European Congress on Computational Methods in Applied Sciences and Engineering (ECCOMAS 2008), Venice, Italy, June 30 - July 5, 2008) [Contribution to conference proceedings]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [Scientific article]
E. Gnani; S. Reggiani; A. Gnudi; R. Colle; G. Baccarani, OH dangling-bond saturation and dielectric function effects in ultra-scaled SNW-FETs, in: Proceedings of the Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 95 - 96 (atti di: Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June, 2008) [Contribution to conference proceedings]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [Scientific article]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Quasi-Ballistic Tansport in Nanowire Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2918 - 2930 [Scientific article]
G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani, Quasi-Ballistic Transport in Nanowire Field-Effect Transistors, in: 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008), HAKONE, s.n, 2008, pp. 5 - 8 (atti di: 2008 International Conference on Simulation of SEmiconductor Processes and Devices (SISPAD 2008), Hakone, Japan, 9-11 September, 2008) [Contribution to conference proceedings]
J. Iannacci; A. Gnudi; B. Margesin; F. Giacomozzi; L. Larcher; R. Brama, Reconfigurable RF-MEMS Based Impedance Matching Network for a CMOS Power Amplifier, in: Proc. of the 9th International Symposium on RF MEMS and RF Microsystems MEMSWAVE 2008, s.l, s.n, 2008, pp. CDROM - CDROM (atti di: 9th International Symposium on RF MEMS and RF Microsystems MEMSWAVE 2008, Heraklion, Greece, 30 June - 3 July, 2008) [Contribution to conference proceedings]
E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, Scaling Properties of Silicon Nanowire and Carbon-Nanotube FETs, «JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE», 2008, 5, pp. 1145 - 1151 [Scientific article]
