E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET), in: Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), BOLOGNA, IEEE, 2010, pp. 69 - 72 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, 6-8 September) [Contribution to conference proceedings]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani, Superlattice-based steep-slope switch, in: Proc. of the 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Piscataway, IEEE PRESS, 2010, pp. 1227 - 1230 (atti di: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1-4 november) [Contribution to conference proceedings]
S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement, «SOLID-STATE ELECTRONICS», 2010, 54, pp. 950 - 956 [Scientific article]
E. Franchi Scarselli; F. Natali; A. Gnudi; M. Innocenti; L. Ciccarelli; M. Scandiuzzo; R. Canegallo; R. Guerrieri, 3D Capacitive transmission of analog signals with automatic compensation
of the voltage attenuation, in: Proceedings, s.l, s.n, 2009, 1, pp. 116 - 119 (atti di: ESSCIRC 2009, Atene (Grecia), 14--18 Settembre 2009) [Contribution to conference proceedings]
M. Guermandi; E. Franchi Scarselli; A. Gnudi, A CMOS 90 nm 55 mW 3.4-to-9.2 GHz 12 Band frequency synthesizer for MB-OFDM UWB, «IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS», 2009, 19, pp. 752 - 754 [Scientific article]
L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; M. Bedani; A. Gnudi, A MEMS Reconfigurable Quad-Band Class-E Power Amplifier for GSM Standard, in: Proc. of DATE 09 Design, Automation &Test in Europe, s.l, s.n, 2009, pp. A - A+4 (atti di: DATE 09 Design, Automation & Test in Europe, Nice, France, 20-24 April, 2009) [Contribution to conference proceedings]
L. Larcher; R. Brama; M. Ganzerli; J. Iannacci; B. Margesin; M. Bedani; A. Gnudi, A MEMS reconfigurable quad-band class-E power amplifier for GSM standard, in: Proceedings of the 22nd IEEE International Conference on Micro Electro Mechanical Systems MEMS 2009, s.l, s.n, 2009, pp. 864 - 867 (atti di: 22nd IEEE International Conference on Micro Electro Mechanical Systems MEMS 2009, Sorrento, Italy, 25-29 January 2009) [Contribution to conference proceedings]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions, in: 2009 International Conference on Simulation of Semiconductor Processes and Devices, S. DIEGO, CALIFORNIA, s.n, 2009, pp. 226 - 229 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, San Diego, California, 9-11 September, 2009) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, An investigation of performance limits of conventional
and tunneling graphene-based transist, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2009, DOI 10.1007/s10825-009-0282-2, pp. 1 - 10 [Scientific article]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Ballistic Ratio and Backscatterig Coefficient in Short-Channel NW-FETs, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 476 - 479 (atti di: European Solid-State Device Research Conference (ESSDERC-2009), Athens, Greece, 14-18 September, 2009) [Contribution to conference proceedings]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Effective Mobility and Backscattering Coefficient in Short Gate-Length Nanowire FETs, in: Global-COE PICE International Symposium on Silicon Nano Devices in 2030, TOKYO, Tokyo Institute of Technology, 2009, pp. 18 - 19 (atti di: International Symposium on Silicon Nano Devices in 2030, Tokyo, Japan, 13-14 October, 2009) [Contribution to conference proceedings]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seethara-man, Explanation of the rugged LDMOS behavior by means of numerical analysis, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2009, 56, pp. 2811 - 2818 [Scientific article]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene-Based High-Performance Nanoelectronic Devices, in: Extended Abstracts of WOCSDICE 2009, MALAGA, s.n, 2009, pp. 2 - 9 (atti di: 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, Malaga, Spain, 17-20 maggio, 2009) [Contribution to conference proceedings]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman, Investigation on saturation effects in the rugged LDMOS transistor, in: Proc. of the 21st ISPSD 2009, BARCELONA, s.n, 2009, pp. 208 - 211 (atti di: 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD 2009), Barcelona, Spain, 14-17 giugno, 2009) [Contribution to conference proceedings]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, in: Proc. 13th International Workshop on Computational Electronics, BEIJING, s.n, 2009, pp. 1 - 4 (atti di: 13th International Workshop on Computational Electronics (IWCE 2009), Beijing, China, 27-29 maggio, 2009) [Contribution to conference proceedings]
