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Antonio Gnudi

Professore associato confermato

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Settore scientifico disciplinare: ING-INF/01 ELETTRONICA

Coordinatore del Corso di Laurea Magistrale in Ingegneria elettronica

Pubblicazioni

M. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani, Semiclassical Transport in Silicon Nanowire FETs including Surface Roughness, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2008, 7, pp. 355 - 358 [articolo]

G. Baccarani; E. Gnani; A. Gnudi; S. Reggiani; M. Rudan, Theoretical foundations of the quantum drift-diffusion and density-gradient models, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 526 - 532 [articolo]

R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, UDINE, s.n, 2008, pp. 121 - 124 (atti di: 9th International Con-ference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March, 2008.) [Contributo in Atti di convegno]

Silvestri L.; Reggiani S.; Gnani E.; Gnudi A.; Baccarani G., Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon, 2008, pp. 129 - 132 (atti di: 9th International Conference on ULtimate Integration of Silicon, ULIS 2008, Udine, Italy, 2008) [Contributo in Atti di convegno]

L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon pp. 129-132, 2008., UDINE, s.n, 2008, pp. 129 - 132 (atti di: 9th International Conference on Ultimate Integration on Silicon (ULIS 2008), Udine, 12-14 March 2008) [Contributo in Atti di convegno]

M. Lenzi; E. Gnani; S. Reggiani; A. Gnudi; M. Rudan; G. Baccarani, A deterministic solution of the Boltzmann transport equation for a one-dimensional electron gas in silicon nanowires, in: Proceedings of the 8th International Conference on Ultimate Integration on Silicon, s.l, s.n, 2007, pp. 47 - 50 (atti di: 8th International Conference on Ultimate Integration on Silicon (ULIS 2007), Leuven, Belgium, 15-16 March, 2007) [Contributo in Atti di convegno]

J. Iannacci; J. Tian; R. Gaddi; A. Gnudi; M. Bartek, A fully parameterized FEM model for electromagnetic optimization of an RF-MEMS wafer-level package, in: Proc. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), s.l, EDA Publishing, 2007, pp. 320 - 325 (atti di: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), Stresa, Italy, 25-27 aprile 2007) [Contributo in Atti di convegno]

E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, A new solution method of the 1D open-boundary Schrödinger equation for transport in NW-FETs including band effects, in: Abstracts of the 12th International Workshop on Computational Electronics (IWCE-12), s.l, s.n, 2007, pp. 1 - 1 (atti di: 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, 8-10 October, 2007) [Contributo in Atti di convegno]

M. Bedani; F. Carozza; R. Gaddi; A. Gnudi; B. Margesin; F. Giacomozzi, A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches, in: Proc. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), s.l, EDA Publishing, 2007, pp. 320 - 324 (atti di: Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP 2007), Stresa, Italy, 25-27 aprile 2007) [Contributo in Atti di convegno]

E. Gnani; A. Gnudi; S. Reggiani; M. Rudan; G. Baccarani, Band Structure Effects on the Current-Voltage Characteristics of SNW-FETs, in: Technical Digest of the International Electron Device Meeting (IEDM 2007), s.l, s.n, 2007, pp. 101 - 104 (atti di: International Electron Device Meeting (IEDM 2007), Washington, USA, 10-12 December, 2007) [Contributo in Atti di convegno]

E.Gnani; S.Reggiani; A.Gnudi; P.Parruccini; R.Colle; M.Rudan; G.Baccarani, Band-Structure Effects in Ultrascaled Silicon Nanowires, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2243 - 2254 [articolo]

R. Gaddi; T. Williams; J. Benedikt; P. J. Tasker; F. Giacomozzi; B. Margesin; A. Gnudi, Large-Signal Vectorial Load–Pull Characterization of MEMS RF-Actuation, «IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS», 2007, 17, pp. 903 - 905 [articolo]

S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G. Baccarani, Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs with Extremely Small Silicon Thicknesses, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 2204 - 2212 [articolo]

L. Del Tin; J. Iannacci; R. Gaddi; A. Gnudi; E. B. Rudny; A. Greiner; J. G. Korvink, Non Linear Compact Modeling of RF-MEMS Switches by Means of Model Order Reduction, in: Proc. of the Solid-State Sensors, Actuators and Microsystems Conference, 2007 (TRANSDUCERS 2007)., s.l, s.n, 2007, pp. 635 - 638 (atti di: Solid-State Sensors, Actuators and Microsystems Conference, 2007 (TRANSDUCERS 2007)., Lyon, France, 10-14 giugno 2007) [Contributo in Atti di convegno]

J. Iannacci; R. Gaddi; A. Gnudi, Non-Linear Electromechanical RF Model of a MEMS Varactor Based on VerilogA and Lumped-Element Parasitic Network, in: Proceedings of the 37th European Microwave Conference, s.l, s.n, 2007, pp. 1342 - 1345 (atti di: 37th European Microwave Conference (EuMC), Munich, Germany, 8-12 ottobre 2007) [Contributo in Atti di convegno]

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