R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, An investigation of performance limits of conventional
and tunneling graphene-based transist, «JOURNAL OF COMPUTATIONAL ELECTRONICS», 2009, DOI 10.1007/s10825-009-0282-2, pp. 1 - 10 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, An Investigation on Effective Mobility in Nano-wire FETs under Quasi Ballistic Conditions, in: 2009 International Conference on Simulation of Semiconductor Processes and Devices, S. DIEGO, CALIFORNIA, s.n, 2009, pp. 226 - 229 (atti di: International Conference on Simulation of Semiconductor Processes and Devices, San Diego, California, 9-11 September, 2009) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Ballistic Ratio and Backscatterig Coefficient in Short-Channel NW-FETs, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 476 - 479 (atti di: European Solid-State Device Research Conference (ESSDERC-2009), Athens, Greece, 14-18 September, 2009) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Effective Mobility and Backscattering Coefficient in Short Gate-Length Nanowire FETs, in: Global-COE PICE International Symposium on Silicon Nano Devices in 2030, TOKYO, Tokyo Institute of Technology, 2009, pp. 18 - 19 (atti di: International Symposium on Silicon Nano Devices in 2030, Tokyo, Japan, 13-14 October, 2009) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seethara-man, Explanation of the rugged LDMOS behavior by means of numerical analysis, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2009, 56, pp. 2811 - 2818 [articolo]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene-Based High-Performance Nanoelectronic Devices, in: Extended Abstracts of WOCSDICE 2009, MALAGA, s.n, 2009, pp. 2 - 9 (atti di: 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, Malaga, Spain, 17-20 maggio, 2009) [Contributo in Atti di convegno]
S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani; M. Denison; S. Pendharkar; R. Wise; S. Seetharaman, Investigation on saturation effects in the rugged LDMOS transistor, in: Proc. of the 21st ISPSD 2009, BARCELONA, s.n, 2009, pp. 208 - 211 (atti di: 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD 2009), Barcelona, Spain, 14-17 giugno, 2009) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, in: Proc. 13th International Workshop on Computational Electronics, BEIJING, s.n, 2009, pp. 1 - 4 (atti di: 13th International Workshop on Computational Electronics (IWCE 2009), Beijing, China, 27-29 maggio, 2009) [Contributo in Atti di convegno]
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fu; N. Sing; G.Q. Lo; D. L. Kwong, Modeling of Nonvolatile Gate-All-Around Charge Trapping SONOS Memory Cells, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 280 - 283 (atti di: European Solid-State Device Research Conference (ESSDERC 2009), Athens, 14-18 September, 2009) [Contributo in Atti di convegno]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; J. Fu; N. Singh; G.Q. Lo; D.L. Kwong, Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells, in: 2009 International Semiconductor Device Research Symposium Proceedings, COLLEGE PARK, Ken Jones, Zeynep Dilli, 2009, pp. 1 - 2 (atti di: 2009 International Semiconductor Device Research Symposium (ISDRS 2009), College Park, MD, USA, December 9-11, 2009) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani, Simulation Study of Graphene Nanoribbon Tunneling
Transistors Including Edge Roughness Effects, in: Proceedings of the ULIS 2009, AACHEN, s.n, 2009, pp. 57 - 60 (atti di: Ultimate Integration on Silicon Conference (ULIS 2009), Aachen, Germany, 18-21 marzo, 2009) [Contributo in Atti di convegno]
S. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise, Theoretical Analysis of the Vertical LOCOS DMOS Transistor with Process-Induced Stress Enhancement, in: Proceedings of the 39th European Solid-State Device Research Conference, ATHENS, s.n, 2009, pp. 161 - 164 (atti di: European Solid-State Device Research Conference (ESSDERC 2009), Athens, 14-18 September, 2009) [Contributo in Atti di convegno]
R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, «SOLID-STATE ELECTRONICS», 2009, 53, pp. 462 - 467 [articolo]
E. Franchi Scarselli; F. Natali; A. Gnudi; M. Innocenti; L. Ciccarelli; M. Scandiuzzo; R. Canegallo; R. Guerrieri, 3D Capacitive transmission of analog signals with automatic compensation
of the voltage attenuation, in: Proceedings, s.l, s.n, 2009, 1, pp. 116 - 119 (atti di: ESSCIRC 2009, Atene (Grecia), 14--18 Settembre 2009) [Contributo in Atti di convegno]
M. Bellei; R. Gaddi; A. Gnudi, A MEMS capacitive test structure for in-line automatic planar stress characterization, «JOURNAL OF MICROMECHANICS AND MICROENGINEERING», 2008, 18, pp. 075006 - 075006+6 [articolo]
