R. Grassi; S. Poli; E Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs, «SOLID-STATE ELECTRONICS», 2009, 53, pp. 462 - 467 [articolo]
E. Franchi Scarselli; F. Natali; A. Gnudi; M. Innocenti; L. Ciccarelli; M. Scandiuzzo; R. Canegallo; R. Guerrieri, 3D Capacitive transmission of analog signals with automatic compensation
of the voltage attenuation, in: Proceedings, s.l, s.n, 2009, 1, pp. 116 - 119 (atti di: ESSCIRC 2009, Atene (Grecia), 14--18 Settembre 2009) [Contributo in Atti di convegno]
M. Bellei; R. Gaddi; A. Gnudi, A MEMS capacitive test structure for in-line automatic planar stress characterization, «JOURNAL OF MICROMECHANICS AND MICROENGINEERING», 2008, 18, pp. 075006 - 075006+6 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; M. Luisier; G. Baccarani, Band Effects on the transport characteristics of ultra-scaled SNW-FETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2008, 7, pp. 700 - 709 [articolo]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Carbon-based Nanoelectronic Devices for High-Performance Logic Applications, in: The 17th European Workshop on Heterostructure Technology Book of Abstracts, VENICE, CLEUP, 2008, pp. 3 - 7 (atti di: 17th European Workshop on Heterostructure Technology (HETECH 2008), Venice, 3-5 November 2008) [Contributo in Atti di convegno]
S. Poli; S. Reggiani; A. Gnudi; E. Gnani; G. Baccarani, Computational study of the ultimate scaling limits of CNT tunneling devices, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 313 - 321 [articolo]
L. Silvestri; S. Reggiani; E. Gnani; A. Gnudi; M. Rudan; G.Baccarani, Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study, in: Proceedings of the IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems, BOSTON, MA, IEEE Press, 2008, pp. 7 - 10 (atti di: IEEE International Workshop on Design and Test of Nano Devices, Circuits and Systems (NDCS 2008), Boston, MA, 29-30 September 2008) [Contributo in Atti di convegno]
J. Iannacci; M. Bartek; J. Tian; R. Gaddi; A. Gnudi, Electromagnetic optimization of an RF-MEMS
wafer-level package, «SENSORS AND ACTUATORS. A, PHYSICAL», 2008, A 142, pp. 434 - 441 [articolo]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani, Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges, in: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings, BEIJING, IEEE Press, 2008, I, pp. 365 - 369 (atti di: 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008), Beijing, 21-23 October, 2008) [Contributo in Atti di convegno]
R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani, Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering, in: Conference Digest of the 66th IEEE Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 105 - 106 (atti di: 66th IEEE Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June 2008) [Contributo in Atti di convegno]
J. Iannacci; B. Margesin; F. Giacomozzi; E. Brusa; M. Gh. Munteanu; A. Gnudi, Improvements in Accuracy of RF-MEMS Electromechanical Simulation within Cadence, in: Proc. of the 5th European Congress on Computational Methods in Applied Sciences and Engineering (ECCOMAS 2008), s.l, s.n, 2008, pp. MS 151 - MS 151 (atti di: 5th European Congress on Computational Methods in Applied Sciences and Engineering (ECCOMAS 2008), Venice, Italy, June 30 - July 5, 2008) [Contributo in Atti di convegno]
M. Lenzi; P. Palestri; E. Gnani; S. Reggiani; A. Gnudi; D. Esseni; L. Selmi; G. Baccarani, Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2086 - 2096 [articolo]
E. Gnani; S. Reggiani; A. Gnudi; R. Colle; G. Baccarani, OH dangling-bond saturation and dielectric function effects in ultra-scaled SNW-FETs, in: Proceedings of the Device Research Conference, SANTA BARBARA, CA, IEEE Press, 2008, pp. 95 - 96 (atti di: Device Research Conference (DRC-2008), Santa Barbara, CA, 23-25 June, 2008) [Contributo in Atti di convegno]
R. Grassi; S. Poli; S. Reggiani; E. Gnani; A. Gnudi; G. Baccarani, Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 1329 - 1335 [articolo]
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani, Quasi-Ballistic Tansport in Nanowire Field-Effect Transistors, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 2918 - 2930 [articolo]
