Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio, ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2016, 63, Article number: 7536602, pp. 3479 - 3486 [articolo]
Tallarico, ANDREA NATALE; Stoffels, Steve; Magnone, Paolo; Jie, Hu; Lenci, Silvia; Marcon, Denis; Sangiorgi, Enrico; Fiegna, Claudio; Decoutere, Stefaan, Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2016, 63, Article number: 7373626, pp. 723 - 730 [articolo]
Hu, Jie; Stoffels, Steve; Lenci, Silvia; De Jaeger, Brice; Ronchi, Nicolo; Tallarico, Andrea Natale; Wellekens, Dirk; You, Shuzhen; Bakeroot, Benoit; Groeseneken, Guido; Decoutere, Stefaan, Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2016, 63, Article number: 7517385, pp. 3451 - 3458 [articolo]
Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio, Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 4A51 - 4A56 (atti di: 2016 International Reliability Physics Symposium, IRPS 2016, Pasadena, USA, April, 2016) [Contributo in Atti di convegno]
Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna, Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs, «SOLID-STATE ELECTRONICS», 2015, 108, pp. 42 - 46 [articolo]
Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna, Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs, in: ISPSD 2015, IEEE, 2015, pp. 153 - 156 (atti di: 27th IEEE International Symposium on Power Semiconductor Devices and IC's, Hong Kong, China, 10-14 May 2015) [Contributo in Atti di convegno]
Tallarico A.N.; Cho M.; Franco J.; Ritzenthaler R.; Togo M.; Horiguchi N.; Groeseneken G.; Crupi F., Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions, «IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY», 2014, 14, Article number: 6553082, pp. 52 - 56 [articolo]
Andrea Natale Tallarico; Paolo Magnone; Enrico Sangiorgi; Claudio Fiegna, Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode, in: SISPAD 2014, IEEE, 2014, pp. 233 - 236 (atti di: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Yokohama, 09/09/2014) [Contributo in Atti di convegno]
Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna, NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS), in: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS), IEEE Computer Society, 2014, pp. 145 - 148 (atti di: International Conference on Ultimate Integration on Silicon, Stockholm, 7-9 April 2014) [Contributo in Atti di convegno]
Andrea Natale Tallarico;Paolo Magnone;Giacomo Barletta;Angelo Magri;Enrico Sangiorgi;Claudio Fiegna, Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs, «IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY», 2014, 14, pp. 657 - 663 [articolo]
