Pizzotti M.; Crescentini M.; Tallarico A.N.; Romani A., An integrated DC/DC converter with online monitoring of hot-carrier degradation, in: Proceedings of the 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, New York, Institute of Electrical and Electronics Engineers Inc., 2019, 2019, pp. 562 - 565 (atti di: 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genova, Italia, 29/11/2019) [Contributo in Atti di convegno]Open Access
Cornigli D.; Tallarico A.N.; Reggiani S.; Fiegna C.; Sangiorgi E.; Sanchez L.; Valdivieso C.; Consentino G.; Crupi F., Characterization and Modeling of BTI in SiC MOSFETs, in: European Solid-State Device Research Conference, Editions Frontieres, «PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE», 2019, 2019-, pp. 82 - 85 (atti di: 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, POLAND, SEP 23-26, 2019) [Contributo in Atti di convegno]Open Access
Tallarico A.N.; Stoffels S.; Posthuma N.; Bakeroot B.; Decoutere S.; Sangiorgi E.; Fiegna C., Gate Reliability of p-GaN HEMT with Gate Metal Retraction, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2019, 66, Article number: 8842623, pp. 4829 - 4835 [articolo]
Stoffels S.; Posthuma N.; Decoutere S.; Bakeroot B.; Tallarico A.N.; Sangiorgi E.; Fiegna C.; Zheng J.; Ma X.; Borga M.; Fabris E.; Meneghini M.; Zanoni E.; Meneghesso G.; Priesol J.; Satka A., Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., «IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS», 2019, 2019-, pp. 1 - 10 (atti di: 2019 IEEE International Reliability Physics Symposium, IRPS 2019, usa, 2019) [Contributo in Atti di convegno]
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contributo in Atti di convegno]
Tallarico A.N.; Stoffels S.; Posthuma N.; Decoutere S.; Sangiorgi E.; Fiegna C., Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, «IEEE ELECTRON DEVICE LETTERS», 2019, 40, Article number: 8636498, pp. 518 - 521 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Manzini, Stefano; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, Article number: 8458210, pp. 5195 - 5198 [articolo]Open Access
Tallarico, Andrea Natale*; Reggiani, Susanna; Depetro, Riccardo; Torti, Andrea Mario; Croce, Giuseppe; Sangiorgi, Enrico; Fiegna, Claudio, Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, «IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY», 2018, 6, Article number: 8255610, pp. 219 - 226 [articolo]Open Access
Tallarico, Andrea Natale; Stoffels, Steve; Posthuma, Niels; Magnone, Paolo; Marcon, Denis; Decoutere, Stefaan; Sangiorgi, Enrico; Fiegna, Claudio, PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2018, 65, pp. 38 - 44 [articolo]
Reggiani, S.; Rossetti, M.; Gnudi, A.*; Tallarico, A.N.; Molfese, A.; Manzini, S.; Depetro, R.; Croce, G.; Sangiorgi, E.; Fiegna, C., TCAD investigation on hot-electron injection in new-generation technologies, «MICROELECTRONICS RELIABILITY», 2018, 88-90, pp. 1090 - 1093 [articolo]Open Access
Stoffels, S.; Bakeroot, B.; Wu, T. L.; Marcon, D.; Posthuma, N. E.; Decoutere, S.; Tallarico, A. N.; Fiegna, C., Failure mode for p-GaN gates under forward gate stress with varying Mg concentration, in: IEEE International Reliability Physics Symposium Proceedings, Institute of Electrical and Electronics Engineers Inc., 2017, pp. 4B4.1 - 4B4.9 (atti di: 2017 International Reliability Physics Symposium, IRPS 2017, Monterey, USA, April 2017) [Contributo in Atti di convegno]
Rossetto, I.; Meneghini, M.; Canato, E.; Barbato, M.; Stoffels, S.; Posthuma, N.; Decoutere, S.; Tallarico, A. N.; Meneghesso, G.; Zanoni, E., Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 298 - 303 [articolo]
Tallarico, A. N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C., Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, «MICROELECTRONICS RELIABILITY», 2017, 76-77, pp. 475 - 479 [articolo]Open Access
Tallarico, Andrea Natale; Stoffels, Steve; Magnone, Paolo; Posthuma, Niels; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio, Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs, «IEEE ELECTRON DEVICE LETTERS», 2017, 38, pp. 99 - 102 [articolo]
Hu, Jie; Stoffels, Steve; Zhao, Ming; Tallarico, Andrea Natale; Rossetto, Isabella; Meneghini, Matteo; Kang, Xuanwu; Bakeroot, Benoit; Marcon, Denis; Kaczer, Ben; Decoutere, Stefaan; Groeseneken, Guido, Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests, «IEEE ELECTRON DEVICE LETTERS», 2017, 38, pp. 371 - 374 [articolo]
