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Pubblicazioni antecedenti il 2004
[1] A. N. Tallarico, M. Cho, J. Franco, R. Ritzenthaler, M. Togo,
N. Horiguchi, G. Groeseneken, F. Crupi, “ Impact of the substrate
orientation on CHC reliability in n-FinFETs – separation of the
various contributions”, IEEE, Transaction on Device and Materials
Reliability, Vol. 14, No. 1, pp. 52-56, 2014.
[2] A. N. Tallarico, P. Magnone, G. Barletta, A. Magrì, E.
Sangiorgi, and C. Fiegna, "Negative bias temperature stress
reliability in trench-gated p-channel power MOSFETs", IEEE,
Transaction on Device and Materials Reliability, Vol. 14, No. 2,
pp. 657-663, 2014.
[3] A. N. Tallarico, P. Magnone, G. Barletta, A. Magrì, E.
Sangiorgi, and C. Fiegna, "NBTI in p-channel power U-MOSFETs -
Understanding the degradation and the recovey mechaisms", IEEE,
Ultimate Integration on Silicon (ULIS), pp. 145-148, Stockholm,
Sweden, 2014.
[4] A. N. Tallarico, P. Magnone, E. Sangiorgi, and C. Fiegna,
"Modeling Self-Heating Effects in AlGaN/GaN Electronics Devices
during Static and Dynamic Operation Mode", IEEE, International
Conference on Simulation of Semiconductor Processes and Devices,
Yokohama, Japan, 2014.
[5] A. N. Tallarico, P. Magnone, G. Barletta, A. Magrì, E.
Sangiorgi, and C. Fiegna, "Influence of bias and temperature
conditions on NBTI physical mechanisms in p-channel power
U-MOSFETs", Solid-State Electronics, Vol. 108, pp. 42-46, 2015.
[6] A. N. Tallarico, P. Magnone, G. Barletta, A. Magrì, E. Sangiorgi, C. Fiegna, "Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs", 27th IEEE International Symposium on Power Semiconductor Devices and IC's, Hong Kong, China, 10-14 May 2015.
[7] A. N. Tallarico, S. Stoffels, P. Magnone, J. Hu, S. Lenci, D. Marcon, E. Sangiorgi, C. Fiegna, S. Decoutere, "Reliability of Au-Free AlGaN/GaN-on-Silicon Schottky Barrier Diodes Under ON-State Stress", IEEE, Transaction on Electron Devices, Vol. 63, No. 2, pp. 723-730, 2016.
