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Guido Masetti

Professore emerito

Alma Mater Studiorum - Università di Bologna

Professore a contratto a titolo gratuito

Dipartimento di Ingegneria dell'Energia Elettrica e dell'Informazione "Guglielmo Marconi"

Pubblicazioni

vai alle Pubblicazioni

Pubblicazioni antecedenti il 2004

Period 1990-up
  • S. Maggio, N.Testoni, L. De Marchi, N. Speciale, G. Masetti ``Ultrasound images enhancement by means of deconvolution algorithms in the wavelet domain'' WSEAS Transaction on Systems, Vol. 11 no. 4, pp 1958-1965, November 2005
  • S. Maggio, N. Testoni, L. De Marchi, N. Speciale, G. Masetti ``Wavelet-based deconvolution algorithms applied to ultrasound images'' Proceedings of the 5th WSEAS International Conference on Signal Processing, Computational Geometry and artificial vision, September 2005
  • A. Marcianesi, R.Padovani, N.Speciale, N.Testoni, G. Masetti ``Fpga implementation of QCWT based algorithm for filtering low SNR signals'' Proceedings of the 2003 IEEE/EURASIP WOrkshop on Nonlinear Signal and Image Processing, June 2003
  • N. Testoni, L. De Marchi, N. Speciale G. Masetti ``Real time classification methods for biological tissues'' Proceedings of the 2004 International Symposium on Nonlinear theory and Applications (NOLTA 2004), Decembre 2004
  • M.Zorzi, N.Speciale, G.Masetti ``Automatic Embedding of a Ferroelectric Capacitor Inside the Circuit Simulator Eldo'' Proceedings of the Fifth IEEE International Workshop on Behavioral Modeling and Simulation 2001 (BMAS 2001), 10-12 october, 2001, pp. 97 -101
  • G.Masetti, N.Speciale ``Modelling Multiterminal Bipolar and Metal-oxide-silicon Devices in Smart Power Technologies'' Global Semiconductor Manufacturing Technology World Markets Series, Business Briefing, January 2001 pp 90--95
  • N.Speciale, F.Franze', G.Masetti ``A World Wide Web Teaching and Learning Environment Applied to Educational Courses of Electronics'' Proc. of European Workshop on Microelectronics Education (EWME2000) Kluwer Academic Press, Aix-en-Provence May 2000
  • N.Speciale, G.Masetti ``On the Effects of Electromagnetic Interferences Conducted on the Power Supply Rails of Integrated JFET/Bipolar Operational Amplifiers'' Proc. of XIV Design of Circuit and Systems Conference (DCIS`99), Palma de Mallorca, Spain, Nov 16-19, 1999, pp. 779 -- 782
  • G.Masetti, N.Speciale ``Nonlinear network elements'' Encyclopedia of Electrical and Electronics Engineering, Ed.J.Webster, Wiley, New York, USA 1999.
  • G.Masetti, N.Speciale ``New curricula in the Information Technology Engineering in Italy: the Project of the University of Bologna as a Case Study'' Proc. of 10th EAEEIE Annual Conference Educational Innovations in EIE, Capri, Italy 17--20 May 1999, pp. 270--273.
  • G.Masetti, G.Setti, N.Speciale ``On the Key Role of Parasitic Capacitances in the Determination of the Susceptibility to EMI of Integrated Operational Amplifiers'' Proc. of 13th International Zurich Symposium on Electromagnetic Compatibility (EMC`99), Zurich, Switzerland, Feb. 1999, pp. 625-630.
  • N.Speciale, A.Leone, G.Masetti ``Classification Scheme for EMI Failures in OpAmps Circuits'' Proc. of International Symposium on Electromagnetic Compatibility (EMC`98), Roma, Italy, Sept. 14--18 1998, pp.225-230.
  • G.Masetti, A.Leone, M.Tartagni, N.Speciale ``Effetti delle Interferenze Elettromagnetiche su Circuiti Elettronici Integrati Analogici e Digitali'' Giornata di Studio AEI L'Aquila, Italia, 3--4 luglio 1997, pp. 53-58.
  • A.Leone, N.Speciale, S.Graffi, G.Masetti ``Modeling Parasitic Bipolar Devices in Advanced Smart Power Technologies'' Proc. of 1997 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM`97), Minneapolis, USA, Sept. 28-30 1997, pp. 127-130.
  • N.Speciale, A.Leone, S.Graffi, G.Masetti ``A Unified Approach for Modeling Multiterminal Bipolar and MOS Devices in Smart Power Technologies'' Proc of 27th European Solid State Device Research Conference (ESSDERC`97), Stuttgart, Germany, Sept. 22-24 1996, pp. 312-315.
  • A.Leone, N.Speciale, S.Graffi, G.Masetti ``An Integrated Environment for Device Parameter Extraction and Modeling'' Proc. of 8th International Conference on Microelectronics (ICM`96), Cairo, Egypt, Dec. 16--18 1996, pp.269-272.
  • N.Speciale, A.Leone, S.Graffi, G.Masetti ``A Dynamic Model for Multiterminal Bipolar Devices Used in Smart Power Application'' Proc. of 26th European Solid State Device Research Conference (ESSDERC`96), Bologna, Italy, Sept. 9-11 1996, pp. 641-644.
  • N.Speciale, G.Onofri, S.Graffi, G.Masetti, S.Palara, G.Privitera ``A New DC Model for Five Terminals Bipolar Devices Used in Smart Power IC'' Proc. of 1996 IEEE International Symposium on Circuits and Systems (ISCAS`96), Atlanta, USA, May 12--15 1996, pp. 629-632.
  • S. Graffi, G. Masetti, A. Piovaccari, ``Criteria to Reduce Failures Induced from Conveyed Electromagnetic Interferences on CMOS Operational Amplifier'', Microelectronics & Reliability, 1996.
  • S. Graffi, G. Masetti, A. Piovaccari and M. Tartagni, ``Failures Induced on Operational Amplifiers by EMI'', invited paper for the Symposium on Electromagnetic Compatibility, Oct. 1996, Belgrad, Serbia.
  • S. Graffi, G. Masetti, A. Piovaccari, ``Low EMI Susceptibility is an AcceptableDemand fo Low Supply Voltage CMOS Integrated Operational Amplifiers?'', to appear in Proc. of the International Symposium on Electromagnetic Compatibility (EMC'96), Sep. 17-20, 1996, Rome, Italy.
  • S. Graffi, G. Masetti, A. Piovaccari, D. Ricci, M. Tartagni: "Criteria to Reduce Failures Induced from Conveyed Electromagnetic Interferences on CMOS Operational Amplifiers, Proc. of 9th RELECTRONICS (RELECTRONIC'95), Budapest, Hungary, pp. 315-318, 16-18 Oct. 1995.
  • A. Leone, G. Masetti, S. Graffi: "Problems in Modelling Multiterminal Bipolar Devices", Proc. of 20th Int. Conf. on Microelectronics, (MIEL'95), pp.675-679, Nis, 12-14 Sept. 1995.
  • A. Piovaccari, S. Graffi, G. Masetti: "A low-voltage low-power CMOS current conveyor", Proc. EECTD'95, pp. 5-9, Istanbul, 27-31 Aug. 1995.
  • G. Masetti, S.Graffi, D. Golzio, Zs. M. V.-Kovàcs: "Failures Induced on Analog Integrated Circuits by Conveyed Electromagnetic Interferences: A Review", Microelectronics and Reliability, vol. 35, pp. , 1995.
  • M. Tartagni, A. Piovaccari, A. Vuoto G. Masetti: "MOST-only normalization module for position sensor detector", Electronics Letters, vol. 31, N. 37, pp. 514-515, 1995.
  • P. Mattei, S.Graffi, Zs. M. V.-Kovàcs, G. Masetti: "Design of Integrated BiCMOS Operational Amplifiers with Low-Probability EMI-Induced Failures", Microelectronics and Reliability, vol. 35, pp. 567-586, 1995.
  • A. Sani, S. Graffi, G. Masetti, G. Setti; Design of CMOS Cellular Neural Networks Operating at Several Supply Voltages", Proc. of the Third International Workshop on Cellular Neural Networks and their Applications, CNNA'94, pp. 363-368, 18-21 Dec. 1994, Rome (Italy).
  • Zs. M. V.-Kovàcs, A. Benedetti, S.Graffi, G. Masetti: "A New Multilevel Simulator for MOS Integrated Circuits", IEICE Trans. Electron., Japan, vol. E77-C, pp. 206-213, Feb. 1994.
  • G. Masetti, D. Golzio, S.Graffi, Zs. M. V.-Kovàcs: "Failures Induced on Analog Integrated Circuits by EMI-Conveyed signals", Invited Paper, Proc. of ESREF'93, pp. 363-370, Bordeaux, France, 4-7 Oct. 1993.
  • D. Golzio, S. Graffi, Zs. M. Kovàcs and G. Masetti: "Correlation between EMI-induced failures and large-signal response of FET-input Op-Amps", Quality and Reliability Engineering Int., vol. 9, pp. 401-405, Sept. 1993.
  • Zs. M. V.-Kovàcs, A. Benedetti, S.Graffi, G. Masetti: "A New Multilevel Simulator for MOS Integrated Circuits", Proc. of Int. Workshop on VLSI Process and Device Technology (VPAD), pp. - , Nara, Japan, 14-15 May 1993.
  • C.Turchetti, M.Conti, G.Masetti: "Analytical Modeling of the MOS transistor for the electrical simulation of Integrated Circuits", Invited Paper in "Process and Device Modeling for Microelectronics", pp. 221-268, Invited Paper, ed. G. Baccarani, Elsevier Pub. 1993.
  • G. F. Dalla Betta, S. Graffi, G. Masetti, Zs. M. Kovàcs: "CMOS Implementation of an analogically programmable CNN", IEEE Trans. on Circuits and Systems, vol. CAS-40, pp. 206-215, March 1993.
  • D. Golzio, S.Graffi, Zs. M. V.-Kovàcs, G. Masetti: "OpAamp macromodel design techniques for EMI effects simulation", Proc. of the Electromagnetic Compatibility Symposium, pp. 207-212, 9-11 March 1993, Zurich (Switzerland).
  • G. F. Dalla Betta, S. Graffi, G. Masetti, Zs. M. Kovàcs: "Design of a COS analog programmable cellular neural network", Proc. of the Second International Workshop on Cellular Neural Networks and their Applications, CNNA'92, pp. 151-156, 14-16 Oct. 1992, Munich (Germany).
  • S.Graffi, Zs. M. V.-Kovàcs, G. Masetti, D. Golzio: "EMI-induced failures in integrated circuit operational amplifiers", Microelectronics and Reliability, vol.32, pp. 1551-1557, 1992.
  • D. Golzio, S.Graffi, Zs. M. V.-Kovàcs, G. Masetti: "Circuit Macromodels and large signal behaviour of FET-input operational amplifiers", Int. Jou. of Circuit Theory and Applications, vol. 20, pp. 75-82, 1992.
  • C.Turchetti, M.Conti, G.Masetti: "Modellistica dei dispositivi MOS per la simulazione elettrica di circuiti integrati", Alta Frequenza, vol.III, N.3, pp. 151- 166, 1992.
  • C.Turchetti, M. Conti, G. Masetti: "A companion macromodeling approach for the transient analysis of MOS large-scale integrated circuits" Journal of Numerical Modeling: Electronics Networks, Devices and Fields", vol.5 ,pp. 227-243, 1992.
  • P. Mattei, S.Graffi, Zs. M. V.-Kovàcs, G. Masetti: "EMI-induced failures in integrated BiCMOS operational amplifiers", Proc. of ESREF'91, Bordeaux, France, 7-10 Oct. 1991.
  • D. Golzio, S.Graffi, Zs. M. V.-Kovàcs, G. Masetti: "EMI-induced failures in integrated circuit operational amplifiers", Proc. of RELECTRONIC'91, Budapest, Hungary, pp. 839-848, 26-30 Aug. 1991.
  • M. Conti, G.Masetti, C.Turchetti: "An accurate CAD-oriented analytical model for short-channel MOS transistor capacitances", Proc. of Int. Workshop on VLSI Process and Device Technology (VPAD), pp. 106-107, Oiso, Kanagawa, Japan, 26-27 May 1991.
  • S.Graffi, G.Masetti and D.Golzio: "New macromodel and measurement for the analysis of EMI effects in 741 opamp circuits", IEEE Trans. on EMC, vol. EMC-33, pp. 25-34, 1991.
  • M.Conti, C.Turchetti, G.Masetti: "A new methodology to produce accurate empirical models for VLSI MOSFETs", Solid-State Electronics, vol. 34, N.1, pp. 79-89, 1991.
  • D.Golzio, S.Graffi, Zs.M.Kovàcs and G.Masetti: "Correlation between EMI-induced failures and large-signal response of FET-input Op-Amps", Proc. of ESREF 90, Valenzano, pp. 385-392, 2-5 Oct. 1990.
  • C.Turchetti, Zs.M.Kovàcs, G.Masetti, M.Conti: "A fully-automatic macromodeling procedure for the electrical simulation of integrated circuits", Proc. of Micro System Technologies 90, Berlin, 10-13 Sept. 1990, Edit. Springer-Verlag, Berlin, 1990.
  • G.Soncini, C.Canali, E.Zanoni, F.Corsi, A.Diligenti, F.Fantini, V.A.Monaco, G.Masetti, C.Morandi: "VLSI Reliability: Contributions from a Three Year National Research Program", European Transactions on Telecommunications, vol. 1, N.2, pp. 209-220, 1990.
Period 1980-90
  • M. Conti, C. Turchetti, G. Masetti: "A new analytical and statistically oriented approach for the two dimensional threshold analysis of short channel MOSFETs", Solid State Electronics, vol. 32, N. 9, pp. 739-747, 1989.
  • M.Conti, C.Turchetti, G.Masetti: "A new methodology to build-up accurate models for VLSI MOSFETs", Proc. of 19th ESSDERC (ESSDERC 89), Berlin, Germany, 11-14 Sept. 1989, Ed. Springer-Verlag, Berlin, 1989.
  • D.Golzio, S.Graffi and G.Masetti: "New macromodel for the analysis of EMI effects in LF355 opamp circuits", Proc. of 1989 Int. Symposium on Electromagnetic Compatibility, Nagoya, Japan, 19-23 Aug. 1989.
  • C. Turchetti, G. Masetti: "Comments on modeling of a depletion-mode MOSFET", Solid State Electronics, vol. 17, N. 12, 1988.
  • R.Piaggesi, C.Turchetti, G.Masetti: "A new macromodeling methodology for the circuit-level simulation of integrated circuits", Proc. Int. ASME Conference on Modeling and Simulation, Rio de Janeiro, Brazil, 13-15 Oct. 1988.
  • S. Graffi, G. Masetti, D. Golzio: "Macromodelli di amplificatori operazionali per la simulazione degli effetti indotti da interferenze elettromagnetiche", Atti della 89a Riunione Annuale AEI, Capri, Ottobre 1988.
  • C.Turchetti, G.Giaccaglini, G.Masetti, M.Conti: "A new methodology to build-up and compare accurate empirical models for VLSI MOSFETs", Proc. Int. ASME Conference on Modeling and Simulation, Rio de Janeiro, Brazil, 13-15 Oct. 1988.
  • M.Conti, C.Turchetti, G.Masetti: "A small-signal high-frequency analysis of the MOS transistor including mobility degradation effects", Proc. Int. ASME Conference on Modeling and Simulation, Rio de Janeiro, Brazil, 13-15 Oct. 1988.
  • D.Golzio, S.Graffi and G.Masetti: "New circuit modeling of operational amplifiers", Proc. of 1989 IEEE Int. Symposium on Electromagnetic Compatibility, Denver (Colorado), pp. 143-150, 20-25 Aug. 1988.
  • M.Conti, C.Turchetti, G.Masetti: "A new analytical and statistical-oriented approach for the two-dimensional analysis of short-channel MOSFET's", Proc. of 18th ESSDERC (ESSDERC 88), Montpellier (France), 13-16 Sept. 1988. (Journal de Phisique, C4, N.9, Tome 49, pp. 253-256, Sept. 1988)
  • P.Mancini, C.Turchetti, G.Masetti: "A non-quasi-static analysis of the transient behaviour of the long-channel MOST valid in all regions of operation", IEEE Trans. on Electron Devices, vol. ED-34, N.2, pp. 325-334, 1987.
  • C.Turchetti, P.Mancini, G.Masetti: "A CAD-oriented non-quasi-static approach for the transient analysis of MOS IC's", IEEE Journal of Solid-State Circuits, vol. SC-21, N. 5, pp. 827-836, 1986.
  • C.Turchetti, P.Prioretti, G.Masetti, E.Profumo, M.Vanzi: "A Meyer-like approach for the transient analysis of digital MOS IC's", IEEE Trans. on CAD of Integrated Circuits and Systems, vol. CAD-5, N.4, pp. 499-507, 1986.
  • C.Turchetti, G.Masetti: "A charge-sheet analysis of short-channel enhancement mode MOSFET's", IEEE Journal of Solid-State Circuits, Special Issue on Custom Integrated Circuits, vol. SC-21, N.2, pp. 267-275, 1986.
  • V.Pierangeli, G.Fedecostante, G.Masetti: "Semicustom standard cells 12x12 bit multiplier/accumulator for acoustic field applications", Proc. of the 8th IASTED Symposium on Measurements and Signal Processing, Paper N. 9.6, Taormina, 2-5 Sept. 1986.
  • F.Fantini, G.Masetti: "Reliability analysis of IC's using physical degradation models and circuit simulation", Proc. of Int. Conference on Semiconductor and Integrated Circuit Technology (ICSIT 86), Beijing, China, 19-26 Oct. 1986.
  • P.Mancini, C.Turchetti, G.Masetti: "A CAD-oriented non-quasi-static MOSFET model for the transient analysis", Proc. IEEE International Solid-State Circuits Conference, Anaheim (California), 19-21 Feb.1986.
  • C.Turchetti, P.Prioretti, G.Masetti, E.Profumo, M.Vanzi: "A Meyer-like model for the MOST, satisfying gate charge conservation", Proc. IEEE Int. Conf. on Computer-Aided-Design, Santa Clara (California), 18-21 Nov. 1985.
  • C.Turchetti, G.Masetti: "A one-dimensional approach to the analysis of short-channel enhancement-mode MOSFET's", Proc. IEEE Custom Integrated Circuits Conference, Paper N. 2-CAD, Portland (Oregon), 20-23 May 1985.
  • C.Turchetti, G.Masetti: "Analysis of the depletion-mode MOSFET model including diffusion and drift currents", IEEE Trans. on Electron Devices, vol. ED-32, N.4, pp.773-782, 1985.
  • C.Turchetti, G.Masetti: "Influence of diffusion current on the DC and AC characteristics of the Junction-Field-Effect Transistor", IEEE Electron Device Letters, vol. EDL-6, N.1, pp. 57-59, 1985.
  • C.Turchetti, G.Masetti, M.Severi: "A four-terminal depletion-mode MOSFET model including diffusion and drift currents", Proc. 14th ESSDERC (ESSDERC 84), Paper N. A.1.2 Lille, France, 10-13 Sept. 1984.
  • M.Severi, L.Dori, C.Turchetti, G.Masetti: "A non-conventional approach to achieve deep junctions with small lateral diffusion in MOS technology", Proc. of Microelectronics 84, Praga, Czechoslovakia, 4-6 Sept. 1984.
  • Y.Tsividis, G.Masetti: "Problems in precision modeling of the MOS transistors for analog applications", IEEE Trans. on Computer Aided Design, vol. CAD-3, N.1, pp. 72-81, 1984.
  • C.Turchetti, G.Masetti: "A CAD-oriented analytical MOSFET model for high-accuracy applications", IEEE Trans. on Computer Aided Design, vol. CAD-3, N.2, pp. 117-122, 1984.
  • C.Turchetti, G.Masetti, Y. Tsividis: "On the small-signal behaviour of the MOS transistor in quasistatic operation", Solid-State Electronics, vol. 26, N. 10, pp. 941-949, 1983.
  • P.G. Merli, E. Calcinaro, G.Masetti: "A new concept for archival electron beam memory", Atti del 14 o Congresso SIME, Ferrara, 21-24 Settembre 1983.
  • G.Masetti, M.Severi, S.Solmi: "Empirical relationship between carrier mobility and carrier concentration in As-, P-, and B-doped silicon", Proc. of the 163th Electrochem. Society Meeting, Paper N. 412, S. Francisco, 8-13 May 1983.
  • C.Turchetti, G.Masetti: "A macromodel for integrated all-MOS operational amplifiers", IEEE Journal of Solid-State Circuits, vol. SC-18, N.4, pp. 389-394, 1983.
  • G.Masetti, M.Severi, S.Solmi: "Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon", IEEE Trans. on Electron Devices, vol. ED-30, N.7, pp.764-7770, 1983.
  • P.U.Calzolari, S.Graffi, G.Masetti, M.Severi: "NMOS dynamic differential amplifier", IEE Proceedings, Part G, vol. 130, N.1, pp. 29-38, 1983.
  • G.Cardinali, S.Graffi, M.Impronta, G.Masetti: "DC MOSFET model for analogue circuit simulation employing process-empirical parameters", IEE Proceedings, Part I, vol. 129, N.2, pp. 61-70, 1982.
  • P.U.Calzolari, G.Masetti, C.Turchetti, M.Severi: "Integrated NMOS output stage with low output impedance", Electronics Letters, vol. 17, N.6, pp. 218-220, 1981.
  • G.Masetti, M.Severi: "Dependence of flat-band voltage of metal-oxide semiconductor structures on phosphosilicate-glass growing conditions", Applied Physics Letters, vol.37, N.2, pp. 226-229, 1980.
  • M.Finetti, G.Masetti, P.Negrini, S.Solmi: "Predeposition through a polysilicon layer as a tool to reduce anomalies in phosphorus profiles and the push-out effect in n-p-n transistors", IEE Proceedings, Part I, vol. 128, N.1, pp. 37-42, 1980.
Period 1970-80
  • C.Morandi, G.Masetti: "One and half phase operation of a CCD delay line", Alta Frequenza-English Issue, vol. 48, N. 7, pp. 432-442, 1979.
  • G.Masetti, S.Solmi: "Relationship between carrier mobility and electron concentration in silicon heavily doped with phosphorus", IEE J. on Solid State and Electron Devices, vol. 3, N. 3, pp. 65-72, 1979.
  • P.U.Calzolari, G.Masetti, M.Severi: "Integrated NMOS operational amplifier for CCD transversal filters", Electronics Letters, vol. 15, N.1, pp. 29-31, 1979.
  • M.Impronta, G.Masetti, M.Severi: "A new empirical MOST model for analog circuit simulation", Proc. of Computer-Aided-Design of Electronic for Space Applications (SPACECAD 79), Paper N. 9.5, Bologna, 19-21 Sept. 1979.
  • P.U.Calzolari, S.Graffi, G.Masetti, M.Severi: "Switched-capacitor concept for analog signal NMOS amplifier", Proc. of the 5th ESSCIRC (ESSCIRC 79), Southampton, England, 18-21 Sept. 1979.
  • M.Impronta, G.Masetti, M.Severi: "Correlation between the softening process and the channel mobility in MOS silicon-gate transistors", Proc. of the 4th Symposium on Solid State Device Technology SSSDT79 (ESSDERC 79), Paper N. B.10.2, Munich, Germany, 10-14 Sept. 1979
  • G.Masetti, M.Severi: "Progetto e realizzazione di amplificatori integrati MOS utilizzati come integratori di carica", CNR-LAMEL Internal Report, Aug. 1979.
  • E.Gabilli, S.Guerri, G.Masetti, M.Severi, G.Spadini: "Resistivity of phosphorus-doped sputter-deposited polycrystalline silicon film", Solid-State Electronics, vol. 20, N. 11, pp. 925-931, 1977.
  • G.Baccarani, G.Celotti, G.Masetti, M.Severi, G.Spadini: "Proprieta' del silicio policristallino depositato mediante sputtering a radiofrequenza", Atti della 78a Riunione Annuale AEI, Como, 18-23 Settembre 1977.
  • G.Baccarani, G.Masetti, M.Severi, G.Spadini: "MOS compatibility of rf-sputtered polycrystalline silicon films", Paper presented at the 3rd International Symposium on Silicon Materials Science and Technology, 151th Electrochem. Society Meeting, Philadelphia, 8-13 May 1977.
  • G.Baccarani, G.Masetti, M.Severi, G.Spadini: "MOS compatibility of rf-sputtered polycrystalline silicon films", in "Semiconductor Silicon 1977", ed. H.Huff and E.Sirtl, The Electrochem. Soc. Inc., pp. 265-275, 1977.
  • G.Masetti, D.Nobili, S.Solmi: "Profiles of phosphorus predeposited in silicon and carrier concentration in equilibrium with SiP precipitates", Paper presented at the 3rd International Symposium on Silicon Materials Science and Technology, 151th Electrochem. Society Meeting, Philadelphia, 8-13 May 1977.
  • G.Masetti, D.Nobili, S.Solmi: "Profiles of phosphorus predeposited in silicon and carrier concentration in equilibrium with SiP precipitates", in "Semiconductor Silicon 1977", ed. H.Huff and E.Sirtl, The Electrochem. Soc. Inc., pp. 648-658, 1977.
  • G.Masetti, S.Solmi, S.Soncini: "On the boron diffusivity versus silicon oxidation-rate", Japanese Journal of Applied Physics, vol. 15, N. 12, pp. 1217-1219, 1976.
  • G.Masetti: "Comments on an approximate solution for the redistribution of impurities during second oxidation", IEEE Trans. on Electron Devices, vol. ED-23, N.9, p. 1106, 1976.
  • G.Masetti, S.Solmi, S.Soncini: "Oxidation-rate dependence of phosphorus diffusivity in silicon", Philosophical Magazine, vol. 33, N. 4, pp. 613-621, 1976.
  • G.Masetti, S.Solmi, S.Soncini: "Temperature dependence of boron diffusion in (111), (110) and (100) silicon", Solid-State Electronics, vol. 19, N.6, pp. 545-547, 1976.
  • G.Baccarani, G.Masetti, M.Severi: "R.F. sputter-deposited polysilicon films for MOS technology", Proc. of 6th ESSDERC (ESSDERC 76), Munich, Germany, Paper N. A.1.3, 13-16 Sept. 1976.
  • D.Nobili, G.Masetti, S.Solmi: "Electrically active phosphorus concentration in silicon solid solution in equilibrium with orthorombic SiP", Proc. of 5th ESSDERC (ESSDERC 75), Grenoble, France, Paper N. A.1.2, 8-12 Sept. 1975
  • E.Gabilli, G.Masetti: "The influence of silicon surface on phosphorus diffusivity", Proc. of 5th ESSDERC (ESSDERC 75), Grenoble, France, Paper N. A.1.3, 8-12 Sept. 1975.
  • G.Masetti, A.Ravaglia, S.Solmi, G.Soncini: "On the boron anisotropic diffusion in (100) and (110) oriented silicon", Proc. of 4th ESSDERC (ESSDERC 74), Nottingham, England, Paper N. B.6.5, 16-19 Sept. 1974.
  • G.Masetti, S.Solmi, S.Soncini: "On phosphorus diffusion in silicon under oxidizing atmospheres", Solid-State Electronics, vol. 16, N.12, pp. 1419-1422, 1973.
  • G.Masetti, P.Negrini, S.Solmi: "Redistribution and anisotropic diffusion of boron in (100) and (111) oriented silicon", Alta Frequenza-English Issue, vol. 42, N. 11, pp. 626-633, 1973.
  • G.Masetti, S.Solmi, S.Soncini: "Anisotropic boron diffusion in silicon under oxidizing atmospheres", Solid-State Communications, vol. 12, N.12, pp. 1299-1301, 1973.
  • G.Masetti, S.Solmi, S.Soncini: "Boron drive-in in silicon in oxidizing atmospheres", Alta Frequenza-English Issue, vol. 42, N. 8, pp. 346-355, 1973.
  • G.Masetti, S.Solmi, S.Soncini: "Boron redistribution at the oxide-silicon interface during drive-in in oxidising atmospheres", Electronics Letters, vol. 9, N.10, pp. 226-229, 1973.
  • A.Chiabrera, E.Gabilli, G.Masetti, S.Solmi: "Primi risultati sulle caratteristiche statiche delle strutture p-n-p+ structures", CNR-LAMEL Internal Report, Feb. 1973.

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