Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Palestri, Pierpaolo; Reggiani, Susanna; Gnani, Elena, TCAD Mobility Model of III-V Short-Channel Double-Gate FETs Including Ballistic Corrections, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2017, 64, Article number: 8070999 , pp. 4882 - 4888 [Scientific article]
Visciarelli, Michele; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna, A full-quantum simulation study of InGaAs NW MOSFETs including interface traps, in: European Solid-State Device Research Conference, Editions Frontieres, 2016, 2016-, pp. 180 - 183 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contribution to conference proceedings]
Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele, Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells, «SOLID-STATE ELECTRONICS», 2016, 115, Article number: S0038110115002580 , pp. 92 - 102 [Scientific article]Open Access
Gnani, Elena; Visciarelli, Michele; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of strain and interface traps on the performance of III-V nanowire TFETs, in: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 275 - 278 (atti di: 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016, chn, 2016) [Contribution to conference proceedings]
Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, Article number: 7428829 , pp. 560 - 563 [Scientific article]Open Access
Visciarelli, M.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G., Optimization of GaSb/InAs TFET exploiting different strain configurations, in: 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 16 - 19 (atti di: 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016, Institute for Microelectronics, TU Wien, aut, 2016) [Contribution to conference proceedings]
Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt, Performance study of strained III-V materials for ultra-thin body transistor applications, in: European Solid-State Device Research Conference, Editions Frontieres, 2016, 2016-, pp. 184 - 187 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, che, 2016) [Contribution to conference proceedings]
Di Lecce, Valerio; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio, Simulation of graphene base transistors with bilayer tunnel oxide barrier: Model calibration and performance projection, «IEEE ELECTRON DEVICE LETTERS», 2016, 37, pp. 1489 - 1492 [Scientific article]
Gnani, Elena; Baravelli, Emanuele; Maiorano, Pasquale; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio, Steep-slope devices: Prospects and challenges, «JOURNAL OF NANO RESEARCH», 2016, 39, pp. 3 - 16 [Scientific article]
Cornigli, Davide; Monti, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Baccarani, Giorgio, TCAD analysis of the leakage current and breakdown versus temperature of GaN-on-Silicon vertical structures, «SOLID-STATE ELECTRONICS», 2016, 115, pp. 173 - 178 [Scientific article]
Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena, TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections, in: European Solid-State Device Research Conference, Gif-sur-Yvette, Editions Frontieres, 2016, 2016-, pp. 416 - 419 (atti di: 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, SWITZERLAND, SEP 12-15, 2016) [Contribution to conference proceedings]
Reggiani, Susanna; Giordano, Carlo; Gnudi, Antonio; Gnani, Elena; Baccarani, Giorgio; Dobrzynska, J.; Vobecky, J.; Bellini, Maurizio, TCAD-based investigation on transport properties of Diamond-like carbon coatings for HV-ICs, in: Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., 2016, pp. 36.7.1 - 36.7.4 (atti di: 62nd IEEE International Electron Devices Meeting, IEDM 2016, usa, 2016) [Contribution to conference proceedings]
Baccarani, Giorgio; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna, Theoretical analysis and modeling for nanoelectronics, «SOLID-STATE ELECTRONICS», 2016, 125, pp. 2 - 13 [Scientific article]
Villani, F.; Gnani, E; Gnudi, A.; Reggiani, S.; Baccarani, G., A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs, «SOLID-STATE ELECTRONICS», 2015, 113, Article number: 6807 , pp. 86 - 91 [Scientific article]
Betti Beneventi, Giovanni; Reggiani, Susanna; Gnudi, Antonio; Gnani, Elena; Alian, Alireza; Collaert, Nadine; Mocuta, Anda; Thean, Aaron; Baccarani, Giorgio, A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2015, 62, Article number: 7293162 , pp. 3645 - 3652 [Scientific article]
