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Alessandro Chini was born in Rovereto, Italy, in 1975. In 2003 he received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova working on the fabrication, characterization, and reliability of GaN-based HEMTs for microwave power applications. Since 2004 he has been with the Department of Engineering “Enzo Ferrari” of the University of Modena and Reggio Emilia, where he is currently a Full Professor of Electronics.
His research activity has been mainly focused on the characterization and development of GaAs-, GaN- and SiC-based compound semiconductor power devices by means of numerical simulations, device fabrication process improvement and the development of dedicated measurement test benches.
Since 2000 he authored or coauthored 135 papers in journals and conference proceedings indexed by Scopus database (scopus id: 7003514476) with 4306 total citations and an h-index of 30.
