Alessandro Chini was born in Rovereto, Italy, in 1975. In 2003 he received the Ph.D. degree in electrical and telecommunication engineering from the University of Padova working on the fabrication, characterization, and reliability of GaN-based HEMTs for microwave power applications.
From 2004 to 2015 he was an Assistant Professor at the Department of Engineering “Enzo Ferrari” of the University of Modena and Reggio Emilia. Since 2015 he has been an Associate Professor at the Department of Engineering “Enzo Ferrari” of the University of Modena and Reggio Emilia.
His research activity has been mainly focused on the characterization and development of GaAs-, GaN- and SiC-based compound semiconductor power devices by means of numerical simulations, device fabrication process improvement and the development of dedicated measurement test benches.