Giuliano, Federico; Reggiani, Susanna; Gnani, Elena; Gnudi, Antonio; Rossetti, Mattia; Depetro, Riccardo, Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2023, 70, pp. 4953 - 4957 [articolo]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 192, Article number: 108256, pp. 108256-1 - 108256-7 [articolo]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R., Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors, «SOLID-STATE ELECTRONICS», 2022, 194, Article number: 108363, pp. 108363-1 - 108363-5 [articolo]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors, in: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Institute of Electrical and Electronics Engineers Inc., 2021, pp. 1 - 4 (atti di: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EuroSOI-ULIS 2021, Caen, Francia, 1-3/09/2021) [Contributo in Atti di convegno]
Giuliano F.; Reggiani S.; Gnani E.; Gnudi A.; Rossetti M.; Depetro R.; Croce G., Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2021, 68, Article number: 9507338, pp. 5438 - 5447 [articolo]Open Access
Giuliano F.; Magnone P.; Pistollato S.; Tallarico A.N.; Reggiani S.; Fiegna C.; Depetro R.; Rossetti M.; Croce G., TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, «MICROELECTRONICS RELIABILITY», 2020, 109, Article number: 113643, pp. 1 - 5 [articolo]Open Access
F. Giuliano, A. N. Tallarico, S. Reggiani, A. Gnudi, E. Sangiorgi, C. Fiegna, M. Rossetti, A. Molfese, S. Manzini, R. Depetro, G. Croce, TCAD predictions of hot-electron injection in p-type LDMOS transistors, in: ESSDERC 2019 49th European Solid State Device Research Conference (ESSDERC), 2019, pp. 86 - 89 (atti di: ESSDERC 2019, Cracovia, 23-26/09/2019) [Contributo in Atti di convegno]
