- Docente: Claudio Fiegna
- Credits: 12
- SSD: ING-INF/01
- Language: Italian
- Moduli: Claudio Fiegna (Modulo 1) Aldo Romani (Modulo 2) Andrea Natale Tallarico (Modulo 3)
- Teaching Mode: Traditional lectures (Modulo 1) Traditional lectures (Modulo 2) Traditional lectures (Modulo 3)
- Campus: Cesena
- Corso: Second cycle degree programme (LM) in Electronics and Telecommunications Engineering for Energy (cod. 8770)
Learning outcomes
By the end of the course, the student understands the operating principles and the fabrication technologies of the most important semiconductor devices that are present in digital, analog, and power circuits, with emphasis on applications in the fields of energy efficiency for environmental sustainability.
Course contents
Quantum mechanics and semiclassical transport model: the wave particle dualism for the electron.
The Schroedinger equation; energy quantization; dispersion relationship for a crystal: direct (Si) and indirect (GaAS) bandgap.
The effective mass approximation. Quantum-mechanical tunneling.
Electron and Holes in semiconductors. Semiconductors at equilibrium. Charge transport in semiconductors. Drift-diffusion transport model. P-N Junction at equilibrium and off equilibrium. P-N I-V characteristics. Non-ideality and non-stationary effects.
Bipolar Transistor. Emitter efficiency and base transport factor.
MOS structure and MOS capacitor. Qualitative and quantitative analysis. Threshold voltage and capacitances.
MOS transistor. Gradual channel approximation and I-V characteristics. Subthreshold. Non ideality effects. Scaling. Short channel effects. Advanced structures and fundamental limits.
Photo-voltaics devices and modules. Power MOSFETs. Micro- and nano-electronics technology evolution.
IC fabrication Technology
Evolution of the CMOS Technology
SOI Technology
FinFET and Tri-gate MOSFETs
Organic Semiconductors.
Transistors based on organic semiconductors.
Organic LEDs.
Organic Photovoltaic cells.
Readings/Bibliography
Dispositivi per la microelettronica
G. Ghione, Mc GrawHill Italia, 1998.
Fundamentals of MODERN VLSI DEVICES
Yuan Taur, Tak H. Ning
Cambridge University Press
ISBN 0 521 55959 6
J. D. Plummer, M. D. Deal, P. B. Griffin, "Silicon VLSI Technology - Fundamentals, Practice and Modeling", Prentice Hall, 2000
Richard S. Muller, Theodore I. Kamins, “Device Electronics for Integrated Circuits, 3rd Edition”, ISBN: 978-0-471-59398-0
Teaching methods
Conventional teaching with blackboard and with the aid of slides.
Laboratory experimental and simulation analysis of transistors and solar cells
Assessment methods
Oral exam
The students will develop the design of a digital circuit based on standard cells in a reference CMOS technology. A technical report shall be delivered and shall present the main design choices and the achieved performance with circuit simulations. The report will be discussed in an oral examination that will also check the knowledge of the design concepts presented in the course.
The most important elements of the assessments will include the knowledge and proper application of the concepts and of the design techniques presented in the course, the capability of autonomously applying the concepts presented in the course, and the correct use of the technical language of the discipline.Teaching tools
Slides.
Numerical simulation programs.
Instrumentation for experimental characterization of transistors and solar cells.
Office hours
See the website of Claudio Fiegna
See the website of Aldo Romani
See the website of Andrea Natale Tallarico