S. Markov , N. Barin, C. Fiegna, S. Roy, E. Sangiorgi, A. Asenov, Analysis of Silicon Dioxide Interface Transition Region in MOS Structures, in: Simulation of Semiconductor Processes and Devices, WIEN NEW YORK, Springer Verlag, 2007, pp. 149 - 152 (atti di: 12th International Conference on Simulation of Semiconductor Processes and Devices, Vienna, 25 - 27 settembre 2007) [atti di convegno-relazione]
P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. A. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, A. L. Lacaita, E. Langer, B. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. S. Spinelli, J. Walczak, Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 54, pp. 106 - 114 [articolo]
C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi, Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs, in: Simulation of Semiconductor Processes and Devices 2007, WIEN NEW YORK, Springer Verlag, 2007, pp. 57 - 60 (atti di: 12th International Conference on Simulation of Semiconductor -processes and Devices (SISPAD 2007), Vienna Austria, 24 - 27 Settembre 2007) [atti di convegno-relazione]
D.Esseni, P. Palestri, E. Sangiorgi, Device Modeling, in: Germanium-based Technologies. From materials to devices, AMSTERDAM, Elsevier BV, 2007, pp. 267 - 294 [capitolo di libro]
N. Barin, C. Fiegna, E. Sangiorgi, International Journal of High Speed Electronics and Systems, «INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS AND SYSTEMS», 2007, 16, pp. 105 - 114 [articolo]
E. Sangiorgi, P. Palestri, D. Esseni, C. Fiegna, L. Selmi, Monte Carlo modeling of nanometer scale MOSFETs, in: Proceedings of the XIV International Workshop on the Physics of Semiconductor Devices: IWPSD 2007, MUMBAI, Sine nomine, 2007, pp. 68 - 73 (atti di: XIV International Workshop on the Physics of Semiconductor Devices: IWPSD 2007, Mumbai India, 16-20 December 2007) [atti di convegno-relazione]
M. Braccioli, P. Palestri, T. Poiroux, M. Vinet, G. Le Carval, M. Mouis, C. Fiegna, E. Sangiorgi, Monte Carlo simulation of MOSFETs with band-offsets in the source and drain, in: Proceedings of the 8th Conference on Ultimate Integration on Silicon, S. L., S. N., 2007, pp. 39 - 42 (atti di: ULIS 2007, Leuven, Belgium, 15, 16 March 2007) [atti di convegno-relazione]
S. Eminente, N. Barin, P. Palestri, C. Fiegna, E. Sangiorgi., Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2007, 9, pp. 2283 - 2292 [articolo]