Claudio Fiegna, Yang Yang, Enrico Sangiorgi, Anthony G. O’Neill, Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation, «IEEE TRANSACTIONS ON ELECTRON DEVICES», 2008, 55, pp. 233 - 244 [articolo]
M. Braccioli, C. Fiegna, E. Sangiorgi, Comparative analysis of self-heating in different SOI architectures, in: EuroSOI 2008 Proceedings, SINE LOCO, sine nomine, 2008, pp. 31 - 32 (atti di: EuroSOI 2008, Cork, Irlanda, Gennaio 23-25 2008) [atti di convegno-relazione]
N. Zanolla, D. Siprak, P. Baumgartner, E. Sangiorgi, C. Fiegna, Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs, in: Proceedings of the 9th International Conference on Ultimate integration on Silicon, PISCATAWAY, NJ 08855-1331, IEEE, 2008, pp. 137 - 140 (atti di: 9th International Conference on Ultimate integration on Silicon - ULIS 2008, Udine, 13-14 marzo 2008) [atti di convegno-relazione]
M. Braccioli, P. Palestri, M. Mouis , T. Poiroux, M. Vinet, G. Le Carval,
C. Fiegna, E. Sangiorgi, S. Deleonibus, Monte-Carlo simulation of MOSFETs with band offsets in the source and drain, «SOLID-STATE ELECTRONICS», 2008, 52, pp. 506 - 513 [articolo]
S. Markov, S. Roy, C. Fiegna, E. Sangiorgi, A. Asenov, On the sub-nm EOT scaling of high-K gate stacks, in: Proceedings of the 9th Internationla Conference on Ultimate Integration on Silicon, PISKATAWAY, NJ 08855-1331, IEEE, 2008, pp. 99 - 102 (atti di: 9th Internationla Conference on Ultimate Integration on Silicon, Udine, 13-14 Marzo 2008) [atti di convegno-relazione]
M. Braccioli, G. Curatola, Y. Yang, E. Sangiorgi, C. Fiegna, Simulation of self-heating effects in 30 nm gate length FinFET, in: Proceedings of the 9th International Conference on Ultimate Integration on Silicon, PISCATAWAY, NJ 08855-1331, IEEE, 2008, pp. 71 - 74 (atti di: 9th International Conference on Ultimate Integration on Silicon - ULIS 2008, Udine, 13-14 marzo 2008) [atti di convegno-relazione]
S. Markov, P. V. Sushko, S. Roy, C. Fiegna, E. Sangiorgi, A. L. Shluger, A. Asenov, Si–SiO2 interface band-gap transition – effects on MOS inversion layer, «PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE», 2008, 205, pp. 1290 - 1295 [articolo]
N. Barin, M. Braccioli, C. Fiegna, E. Sangiorgi, Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs, «IEEE TRANSACTIONS ON NANOTECHNOLOGY», 2007, 6, pp. 421 - 430 [articolo]